“…Additionally, the increased mobility due to higher channel In x content leads to an increase in I ds . Finally, when the Si δ‐doping layer on the spacer is etched, the resistance sharply increases and the current abruptly decreases.In the previous work, we stopped to etch when R ds = 18.7 Ω and I ds = 31.3 mA were measured, and the resultant device showed good performance [
8]. Here, the ratios (Γ) of before and after etching for each R ds and I ds can be defined in equations as follows:
where i = 0,1,2…, n is integer and n means the number of times etching has been performed.…”