2022
DOI: 10.4218/etrij.2021-0370
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Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

Abstract: We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two‐step electron‐beam lithography process using a three‐layer resist and gate recess etching process using citric acid. An electron‐beam lithography process was developed to fabricate a T‐shaped gate electrode with a fine gate foot and a relatively large gate head. This was r… Show more

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Cited by 4 publications
(13 citation statements)
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“…Also, as the vertical etching depth increases, the lateral etching width also widens. This characteristic of isotropic etching is consistent with the TEM images from our previous works [7, 8], indicating good controllability and reproducibility.…”
Section: Introductionsupporting
confidence: 91%
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“…Also, as the vertical etching depth increases, the lateral etching width also widens. This characteristic of isotropic etching is consistent with the TEM images from our previous works [7, 8], indicating good controllability and reproducibility.…”
Section: Introductionsupporting
confidence: 91%
“…Figure 2 shows the R ds at V ds =0 V and the I ds at V ds =1 V for these two epitaxial structures. Comparing R ds and I ds before etching for N cap =1 × 10 19 cm −3 (dash‐dotted line [8]) and N cap =2 × 10 19 cm −3 (solid line, this work), high N cap reduces R ds and increases I ds . In the pre‐etching epitaxial structure, the current flows more through the cap layer, which has a lower resistance compared to the channel layer.…”
Section: Introductionmentioning
confidence: 92%
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