The prominent band in the Raman spectra of a zeolitic framework in the 300-600-cm-~ region is found to be sensitive to the ring structures present in the framework. In the case of zeolites with even-membered rings such as 4,6,8,10, and 12 rings, the band is around 500 cm-l. The presence of five-membered rings leads to a lowering of this frequency to 390-450 cm-I. For the ferrierite family of zeolites with 5-, 6-, 8-, and IO-membered rings, this band is at 430 cm-I. The absence of eight-membered rings in this set increases the frequency to 450 cm-I, as in ZSM-23 and NU-10. The presence of 4-, 5-, 6-, 8-, IO-, or 12-membered rings, as in ZSM-5, mordenite, and ZSM-48 leads to bands at 390 and 460 an-'. This empirical correlation could be of considerable value in determining zeolitic framework structure.
In this paper, we report the possibility of silicon (Si) plasma wave transistor (PWT) as a resonant terahertz (THz) emitter based on the theoretical analysis focusing on the strained Si with enhanced mobility. Under asymmetric boundary conditions for plasma wave instability, the amplitude of plasma wave in FET channel increases and this plasma wave increment provides the basis of the electromagnetic (EM) wave emission from FET. Because this instability is controlled by manipulation of plasma wave velocity (s) and electron drift velocity (v 0 ), we propose the design window based on s-v 0 plot which determines whether the device operates as the resonant THz emitters considering all the required physical conditions. It is expected from the proposed design window that strained Si PWT down to 10 nm gate length with enhanced channel mobility of 500 cm 2 &V %1 &s %1 can operate as a resonant emitter in THz frequency range.
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