DC∼10.5 GHz complimentary metal oxide semiconductor distributed amplifier with RC gate terminal network for ultra-wideband pulse radio systems

Chang, Jin-Fa; Lin, Yo‐Sheng

doi:10.1049/iet-map.2011.0231

Cited by 17 publications

(13 citation statements)

References 13 publications

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“…The FOM of the proposed UWB LNA is 5.69, and 4.9 for the BW of 10 GHz, and 11 GHz, respectively. The proposed LNA architecture has shown better FOM than LNAs published in . Moreover, the performances of NF and BW are better than the LNA reported in .…”

Section: Measurement Results Of the Proposed Uwb Lnamentioning

confidence: 80%

“…The various LNA BW expansion techniques that are used can be classified as follows: the first is a current‐reuse technique , the second is a differential LNA with an inductive peaking technique , and the third is distributed LNAs . The current‐reuse techniques that are described in have performed well in terms of power consumption and gain; however, the NF BW obtained is less.…”

Section: Introductionmentioning

confidence: 99%

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A 1–11 GHz ultra‐wideband LNA using M‐derived inductive peaking circuit in UMC 65 nm CMOS

Bhatt

Mukherjee

Redouté

2017

Micro & Optical Tech Letters

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A high‐gain, low‐power, and low‐noise amplifier (LNA) is designed in UMC 65 nm radio frequency (RF)‐CMOS technology for operation over the 1 to 11 GHz RF band. This LNA design is based on an m‐derived inductive peaking circuit with a shunt feedback inverter. The m‐derived inductive peaking circuit is placed between two shunt feedback inverters. Further, a split inductor topology is introduced in the circuit. The procedure for the integrating of an m‐derived inductive peaking circuit in LNA is explained in detail. The proposed circuit achieves more than 14 dB of power gain over an ultra‐wideband of 1 to 11 GHz. The measurement of the proposed LNA achieves a minimum of 2.5 dB of noise figure, and more than −8 dBm of third‐order input intercept point, while consuming 11.3 mW of power. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:521–526, 2017

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Section: Measurement Results Of the Proposed Uwb Lnamentioning

confidence: 80%

Section: Introductionmentioning

confidence: 99%

A 1–11 GHz ultra‐wideband LNA using M‐derived inductive peaking circuit in UMC 65 nm CMOS

Bhatt

Mukherjee

Redouté

2017

Micro & Optical Tech Letters

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“…A conventional TWA reported in [20] proposed a gate transmission line termination circuit to reduce NF. The adopted RLC terminal network can reduce the NF to a flat and low level over the whole low-to-medium frequency range of DC-7 GHz at the expense of little input matching S 11 degradation.…”

Section: The Traveling-wave Power Amplifier Architecturementioning

confidence: 99%

0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination

Vasjanov

Barzdėnas

2020

Electronics

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Broadband amplifiers are essential building blocks used in high data rate wireless, radar, and instrumentation systems, as well as in optical communication systems. Only a traveling-wave amplifier (TWA) provides sufficient bandwidth for broadband applications without reducing modern linearization techniques. TWA requires gate-line and drain-line termination, which can be implemented on- and off-chip. This article compares the performance of identical 0.13 μm CMOS TWAs, differing only in gate-line termination placement. Measurement results revealed that the designed TWAs with on- and off-chip termination have a bandwidth of 10 GHz with a maximum gain of 15 dB and a power-added efficiency (PAE) of 5%–22% in the whole operating frequency range. Placing the gate-line termination off-chip results in an S21 flatness reduction, compared to the gain of a TWA with on-chip termination. Gain fluctuation over frequency is reduced by 4–8 dB when the termination resistor is placed as an external circuit.

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“…A conventional TWA reported in (Chang & Lin, 2012) proposed a gate transmission line termination circuit to reduce NF. The adopted RLC terminal network can reduce the NF to a flat and low level over the whole low-to-medium frequency range of DC-7 GHz at an expense of little input matching S 11 degradation.…”

Section: Traveling Wave Architecturementioning

confidence: 99%

Mid-band 5G wireless network power amplifier research

Vasjanov¹

2019

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Vilnius 2019 Disertacija rengta 2015-2019 metais Vilniaus Gedimino technikos universitete. Vadovas doc. dr. Vaidotas BARZDĖNAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001). Vilniaus Gedimino technikos universiteto Elektros ir elektronikos inžinerijos mokslo krypties disertacijos gynimo taryba: Pirmininkas prof. habil. dr. Romualdas NAVICKAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001). Nariai: dr. Alvydas LISAUSKAS (Lenkijos mokslų akademijos Aukšto slėgio fizikos institutas, fizika-N 002), doc. dr. Vitalij NOVICKIJ (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001), prof. dr. Šarūnas PAULIKAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001), prof. dr. Algimantas VALINEVIČIUS (Kauno technologijos universitetas, elektros ir elektronikos inžinerija-T 001). Disertacija bus ginama viešame Elektros ir elektronikos inžinerijos mokslo krypties disertacijos gynimo tarybos posėdyje 2019 m. birželio 13 d. 10 val. Vilniaus Gedimino technikos universiteto senato posėdžių salėje.

show abstract

DC∼10.5 GHz complimentary metal oxide semiconductor distributed amplifier with RC gate terminal network for ultra-wideband pulse radio systems

Cited by 17 publications

References 13 publications

A 1–11 GHz ultra‐wideband LNA using M‐derived inductive peaking circuit in UMC 65 nm CMOS

A 1–11 GHz ultra‐wideband LNA using M‐derived inductive peaking circuit in UMC 65 nm CMOS

0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination

Mid-band 5G wireless network power amplifier research

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