Data analysis for spectroscopic ellipsometry

Jellison, G. E.

doi:10.1016/0040-6090(93)90298-4

Cited by 306 publications

(128 citation statements)

References 25 publications

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“…8 Infrared ͑IR͒ 4,[9][10][11][12][13][14] and Raman spectroscopy, [15][16][17][18][19][20] as well as IR and visible-light ͑VIS͒ spectroscopic ellipsometry ͑SE͒ [21][22][23][24][25] were used to investigate BN thin-film optical and structural properties. It was demonstrated that polarized IR reflection ͑PIRR͒ measurements, 26,27 IR-SE [28][29][30][31][32][33][34] and VIS-SE 25,30 are useful techniques to resolve the BN microstructure from the thin-film optical properties.…”

Section: Introductionmentioning

confidence: 99%

“…In order to analyze the ellipsometric data, one needs to model the sample structure as well as the materials optical properties. 33 are dominated by the in-plane ͑Ќ͒, out-of-plane ͑ ʈ ͒ h-BN, and c- BN (c) 29 that the apparent h-BN out-of-plane ͑in-plane͒ thinfilm LO resonance vibration LOʈ ͑ LOЌ ) shifts from LOʈ ͑ TOЌ ) to TOʈ ͑ LOЌ ) when the average grain c-axis orientation angle ⌰ changes from perpendicular to parallel to the sample surface, respectively ͑Figs. 1 and 2 in Ref.…”

Section: Introductionmentioning

confidence: 99%

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In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

Franke

Schubert

Hecht

et al. 1998

Journal of Applied Physics

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In situ infrared ͑IR͒ spectroscopy and visible-light ͑VIS͒ spectroscopic ellipsometry over the spectral range from 700 to 2000 cm Ϫ1 and 1.5-3.5 eV, respectively, were used to investigate the optical behavior of boron nitride ͑BN͒ thin films at temperatures from room temperature ͑RT͒ to 600°C. The polycrystalline hexagonal ͑h͒ and mixed-phase h-and cubic (c)-BN thin films were deposited by magnetron sputtering on ͓001͔ silicon. We observe a reversible moisture incorporation process in as-grown h-BN samples. When stored in normal ambient, the h-BN thin films absorb water into thin-film micropores. When annealed in ultrahigh vacuum or a dry nitrogen atmosphere, the samples expel moisture but retain their microstructure. This is observable by reduction of the thin-film refractive indices in accordance with changes in the IR lattice resonance behavior. The optical properties of high c-BN content thin films remain unchanged during annealing. And both intrinsic h-and c-BN thin-film VIS refractive indices are nearly temperature independent, at least up to 600°C. Therefore, RT BN optical constants can be used for feedback loop control in in situ thin-film growth at temperatures up to 600°C. ͓S0021-8979͑98͒07613-0͔

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

Franke

Schubert

Hecht

et al. 1998

Journal of Applied Physics

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“…The most commonly used algorithm is the Marquart-Levenberg algorithm [36]. The closeness of the fit is described by the Mean Square Error (MSE), which is used to quantify the difference between the experimental and generated data [37]. A lower MSE implies a better fit.…”

Section: Discussionmentioning

confidence: 99%

Detection of ultrathin biological films using vacuum ultraviolet spectroscopic ellipsometry

Goyal

Pribil

Woollam

et al. 2008

Materials Science and Engineering: B

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“…17, and only the film thickness was varied so that the mean square error becomes minimum. 18 The resultant fitted curves are shown by the broken lines in Fig. 7.…”

Section: Measurement With a Thin-film Sample "Sample C…mentioning

confidence: 99%

Error-reduced channeled spectroscopic ellipsometer with palm-size sensing head

Okabe

Hayakawa

Matoba

et al. 2009

Review of Scientific Instruments

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This paper describes a newly developed prototype system of the channeled spectroscopic ellipsometer ͑CSE͒. The new system has a feature that the major systematic and random error sources of the previous CSEs are effectively reduced or compensated for. In addition, the prototype preserves the advantageous features of the CSE in that it has a palm-size sensing head and that its acquisition time is as fast as 20 ms. Its performance is experimentally examined by use of 12 films whose thicknesses are ranging approximately from 3 to 4000 nm. The film thicknesses measured by the new CSE show good agreements with the ones by the rotating-compensator spectroscopic ellipsometer. The stability of the film-thickness measurement of the new CSE against the temperature change from 5 to 45°C is less than 0.11 nm. The CSE can open up new applications of the spectroscopic ellipsometers in which the compactness, the simplicity, and the rapid response are important.

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Data analysis for spectroscopic ellipsometry

Cited by 306 publications

References 25 publications

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

Detection of ultrathin biological films using vacuum ultraviolet spectroscopic ellipsometry

Error-reduced channeled spectroscopic ellipsometer with palm-size sensing head

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