Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode

Wang, X. D.; Hu, Weida; Chen, X. S.; Lü, Wei; Tang, Hengjing; Li, T.; Gong, Haimei

doi:10.1007/s11082-009-9279-0

Cited by 30 publications

(7 citation statements)

References 9 publications

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“…The drift-diffusion model which consists of the Poisson equation, the electron and hole continuity equations and the current transport equation is used Wang et al 2008;Xia et al 2006;Quan et al 2006a,b), and laser-induced electron-hole generation term G is added to the continuity equations.…”

Section: Simulation Modelsmentioning

confidence: 99%

Simulation of laser beam induced current for HgCdTe photodiodes with leakage current

Yin

Zhang

et al. 2009

Opt Quant Electron

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We report on 2D numerical simulations of laser beam induced current (LBIC) for HgCdTe photovoltaic detector. The effect of junction leakage current on LBIC signal is investigated, and different leakage paths caused by different reasons in HgCdTe photodiode arrays are taken into account in the simulation. The simulation results are in good agreement with the experiment data. Simulation results suggest that LBIC can be used to determine the existence of junction leakage current and investigate the origin of junction leakage current.

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Section: Simulation Modelsmentioning

confidence: 99%

Simulation of laser beam induced current for HgCdTe photodiodes with leakage current

Yin

Zhang

et al. 2009

Opt Quant Electron

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“…P-i-n photodetectors can provide high quantum efficiency and low-noise operation. However, neither MSM photodetector nor p-i-n photodetector has internal gain [1][2][3][4][5]. Avalanche photodiodes (APDs) have large internal gain but also large noise because of avalanche multiplication effect [6].…”

Section: Introductionmentioning

confidence: 99%

“…& Jun Chen junchen@suda.edu.cn1 School of Electronic and Information Engineering, Soochow University, Suzhou 215006, Jiangsu, China…”

mentioning

confidence: 99%

Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

Chen

Zhu

2016

Appl. Phys. A

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Fabrication, physical simulation, and optimization of two-terminal Pnp heterojunction phototransistors (2T-HPTs) based on In 0.53 Ga 0.47 As/InP are reported. The parameters of fundamental models are determined by comparing the simulated current and response characteristics with the experimental results. To optimize the optical gain and device performance, the precise adjustment of the base doping level, base width, and compositional grading of base has been investigated. Properly reducing the base width or increasing the range of the compositional grading can greatly enhance the emitter injection efficiency. The effects of high-low doping in collector region and the insertion of a thin, undoped InGaAs layer in the base region of the HPT have also been investigated in detail. It is found the high-low doping in collector can form an electric field to aid carrier transport, and the intrinsic layer between emitter and base has functions of reducing knee voltage and the dark current of HPT.

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“…However, the lattice matched substrates with MCT as ZnCdTe are more expensive than III-V substrates and also the growing of MCT structures with low dislocation density on Si or GaAs as alternate substrates have some difficulties. 23 InGaAs along with HgCdTe (MCT) has also been extensively studied with a great potential for the infrared detector applications [24][25][26][27][28][29][30][31][32] such as metal-semiconductor-metal (MSM) photodetectors. [33][34][35] InGaAs detector performance agrees with that of MCT in the 1.5-3.7 lm wavelength range due to similar semiconductor band structures.…”

Section: Introductionmentioning

confidence: 99%

Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications

Asar

Özçelik

Özbay

2014

Journal of Applied Physics

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Three InGaAs/InP structures for photodetector applications were grown with different indium compositions by MBE technique. The structural properties of the samples have been obtained by means of high resolution X-ray diffraction and secondary ion mass spectrometry measurements. Three InGaAs/InP metal-semiconductor-metal devices were fabricated at room temperature. The experimental forward and reverse bias current–voltage characteristics of the devices such as ideality factor, barrier height, and saturation current were evaluated considering the structural properties of the grown structures. The carrier recombination lifetime and diffusion length in the devices were also calculated using carrier density and mobility data obtained with Hall effect measurement at room temperature. It was determined that all room temperature fabricated devices improved the Schottky barrier height. Especially, the device fabricated on the lower mismatched structure exhibited barrier height enhancement from 0.2 eV, which is the conventional barrier height to 0.642 eV. In addition, the obtained results show that the room temperature fabricated devices on InGaAs/InP structures can be convenient for infrared photodetector applications.

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Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode

Cited by 30 publications

References 9 publications

Simulation of laser beam induced current for HgCdTe photodiodes with leakage current

Simulation of laser beam induced current for HgCdTe photodiodes with leakage current

Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications

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