Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain

Cervera, C.; Ribet-Mohamed, I.; Taalat, R.; Pérez, Jean-Philippe; Christol, Philippe; Rodriguez, J. B.

doi:10.1007/s11664-012-2035-4

Cited by 40 publications

(14 citation statements)

References 23 publications

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“…These values are comparable with the ones of InSb photodiodes recently grown by MBE [9]. To complete electrical characterization, noise measurements were performed under dark conditions at 77K on such MWIR diodes [10]. An example of the intrinsic noise spectrum obtained for a bias voltage of -0.2 V is displayed in Fig.…”

Section: T2sl Mwir Photodiode and Focal Plane Arrays (Fpa) At The Iessupporting

confidence: 78%

Progress on type-II InAs/GaSb superlattice (T2SL) infrared photodetector : from MWIR to VLWIR spectral domains

Christol¹,

Rodriguez²

2017

International Conference on Space Optics — ICSO 2014

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Section: T2sl Mwir Photodiode and Focal Plane Arrays (Fpa) At The Iessupporting

confidence: 78%

Progress on type-II InAs/GaSb superlattice (T2SL) infrared photodetector : from MWIR to VLWIR spectral domains

Christol¹,

Rodriguez²

2017

International Conference on Space Optics — ICSO 2014

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“…The J-V curves are fitted by using Shockley Formula in order to identify the dominant dark current mechanism in each operating temperature range. We then extracted minority carrier lifetimes of the MWIR SL photodiode quantitatively [16]. We measured responsivity spectra of the detector at various temperatures.…”

Section: à3mentioning

confidence: 99%

Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

Tansel

Hoştut

Elagöz

et al. 2016

Superlattices and Microstructures

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a b s t r a c tTemperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification of dominant current mechanisms in each operating temperature can be used to extract minority carrier lifetimes which are highly important for understanding carrier transport and improving the detector performance. InAs/AlSb/GaSb based T2SL N-structures with AlSb unipolar barriers are designed for low dark current with high resistance and detectivity. Here we present electrical and optical performance of such N-structure photodetectors.

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“…Optical transition between the highest hole (heavy-hole) and the lowest conduction minibands is employed for the detection of incoming IR radiation. The operating wavelength of the T2SLs can be tailored from 3 m to 32 m by varying thickness of one or two T2SL constituent layers [11][12][13]. Some parameters of T2SL constituent materials, InAs and GaSb, are shown in Table 1.…”

Section: Introductionmentioning

confidence: 99%

InAs/GaSb Type-II Superlattice Detectors

Plis

2014

Advances in Electronics

105

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InAs/(In,Ga)Sb type-II strained layer superlattices (T2SLs) have made significant progress since they were first proposed as an infrared (IR) sensing material more than three decades ago. Numerous theoretically predicted advantages that T2SL offers over present-day detection technologies, heterojunction engineering capabilities, and technological preferences make T2SL technology promising candidate for the realization of high performance IR imagers. Despite concentrated efforts of many research groups, the T2SLs have not revealed full potential yet. This paper attempts to provide a comprehensive review of the current status of T2SL detectors and discusses origins of T2SL device performance degradation, in particular, surface and bulk dark-current components. Various approaches of dark current reduction with their pros and cons are presented.

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Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain

Cited by 40 publications

References 23 publications

Progress on type-II InAs/GaSb superlattice (T2SL) infrared photodetector : from MWIR to VLWIR spectral domains

Progress on type-II InAs/GaSb superlattice (T2SL) infrared photodetector : from MWIR to VLWIR spectral domains

Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

InAs/GaSb Type-II Superlattice Detectors

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