Dark Count Rate Degradation in CMOS SPADs Exposed to X-Rays and Neutrons

Ratti, L.; Brogi, P.; Collazuol, G.; Betta, G.-F. Dalla; Ficorella, A.; Lodola, L.; Marrocchesi, P. S.; Mattiazzo, Serena; Morsani, F.; Musacci, M.; Pancheri, L.; Vacchi, C.

doi:10.1109/tns.2019.2893233

Cited by 19 publications

(9 citation statements)

References 43 publications

(17 reference statements)

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“…The DCR trend with respect to Displacement Damage Dose in this device has been deeply investigated in 30 . Previous studies on devices from the same batch, based on X-ray exposures with TID levels up to 1 Mrad, have shown a much lower increase in DCR 38 . Moreover, MOSFET transistors present in front-end electronics, were actually proven to be tolerant to much larger radiation levels than the tens of krad reached during these tests 39 .…”

Section: The Proton Irradiationmentioning

confidence: 73%

Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

Capua

Campajola

Fiore

et al. 2021

Sci Rep

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This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by different junction types: the first structure is constituted by a P+/Nwell junction, while the second is formed by a Pwell/Niso junction. RTS occurrence has been measured in about one thousand SPAD pixels and the differences addressed in two layouts are motivated and discussed. Hypotheses on the RTS origin are drawn by analyzing the RTS time constants and the RTS occurrence evolution as a function of the annealing temperature.

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Section: The Proton Irradiationmentioning

confidence: 73%

Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

Capua

Campajola

Fiore

et al. 2021

Sci Rep

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“…As expected, the neutron yield of Cu is significantly higher than for the Al target. Moreover, we previously measured a negligible contribution of neutrons with a graphite target, which results from the high energy threshold (20.7 MeV) for the 12 C(p,n) 12 N reaction 44 . Since we aim to establish a scientific methodology for the production of controlled neutron beams with medical cyclotrons, these findings are of paramount importance.…”

Section: Discussionmentioning

confidence: 99%

“…In addition, Jeffries et al characterized the neutron fluence rate during a production of 18 F at a medical cyclotron for evaluating its potential use in neutron damage studies 10 . The neutron-induced damage on materials and electronics is a hot topic for space and avionics, as well as for detectors used in medical and High Energy Physics (HEP) applications [11][12][13][14][15][16][17] .…”

Section: Introductionmentioning

confidence: 99%

Neutron fields at high- and low-energy particle accelerators: a novel experimental approach based on the DIAMON spectrometer

Braccini

Casolaro

Dellepiane

et al. 2022

Preprint

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The characterization of particle accelerator induced neutron fields is challenging but fundamental for research and industrial activities, including radiation protection, neutron metrology, developments of neutron detectors for nuclear and high-energy physics, decommissioning of nuclear facilities, and studies of neutron damage on materials and electronic components. This work reports on the study of a novel approach to the experimental characterization of neutron spectra at two complex accelerator environments, namely the CERF, a high-energy mixed reference field at CERN in Geneva, and the Bern medical cyclotron laboratory, a facility used for multi-disciplinary research activities, and for commercial radioisotope production for nuclear medicine. In particular, measurements were performed through an innovative active neutron spectrometer called DIAMON, a device developed to provide in real time neutron energy spectra without the need of guess distributions. The intercomparison of DIAMON measurements with reference data, Monte Carlo simulations, and with the well-established neutron monitor Berthold LB 6411, has been found to be highly satisfactory in all conditions. It was demonstrated that DIAMON is an almost unique device able to characterize neutron fields induced by hadrons at 120 GeV/c as well as by protons at 18 MeV colliding with different materials. The accurate measurement of neutron spectra at medical cyclotrons during routine radionuclides production for nuclear medicine applications is of paramount importance for the facility decommissioning. The findings of this work are the basis for establishing a methodology for producing controlled proton-induced neutron beams with medical cyclotrons.

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“…[1][2][3] As such, applications, like positron emission tomography (PET), fluorescence lifetime imaging, charged particle, tracking and 3D vision focusing on optical signal timing, mostly exploit single-photon detectors. [4][5][6][7] Photo multiplier tubes (PMTs), superconducting single-photon detectors along with single-photon avalanche diodes (SPADs), are well-known single-photon detectors. The continuous improvement of SPAD characteristics has been leading to successful integration of these single-photon detectors in CMOS technologies which makes them very attractive in comparison with other single-photon detectors.…”

Section: Introductionmentioning

confidence: 99%

Low‐power compact tunable quenching configuration for minimizing afterpulsing in single‐photon avalanche diodes

Pahlavanzadeh

Karami

2020

Circuit Theory & Apps

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Summary This paper unveils two efficient free running (FR) quenching circuits with the aim of reducing quenching time (QT) to minimize avalanche charge. Likewise, one circuit is compactly designed with low power consumption, suitable for single‐photon avalanche diode (SPAD) with hold‐off time below 10 ns. In second circuit, tunable hold‐off and reset‐time are provided within a wide range without decreasing QT, which are desirable in many applications. Proper operation and circuit uncertainty is assessed by Monte Carlo analysis in a standard 90‐nm complementary metal‐oxide semiconductor (CMOS) technology. In a bid to do a comparison between previously reported circuits and the proposed circuits, they are simulated with same SPAD model and parameters and results corroborate the proposed circuits guarantee active quenching time (AQT) of below 1 ns. Proposed circuits with current and area consumption of 0.74 μA, 32 μm2 for 7‐ns dead time and 16.2 μA, 93 μm2 for 21‐ns dead time are more efficient in terms of QT, area, and power consumption in comparison with other works.

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Dark Count Rate Degradation in CMOS SPADs Exposed to X-Rays and Neutrons

Cited by 19 publications

References 43 publications

Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

Neutron fields at high- and low-energy particle accelerators: a novel experimental approach based on the DIAMON spectrometer

Low‐power compact tunable quenching configuration for minimizing afterpulsing in single‐photon avalanche diodes

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