2021
DOI: 10.1038/s41598-021-87962-w
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Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

Abstract: This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by different junction types: the first structure is constituted by a P+/Nwell junction, while the second is formed by a Pwell/Niso junction. RTS occurrence has been measured in about one thousand SPAD pixels and the differences addr… Show more

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Cited by 8 publications
(4 citation statements)
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“…The Mie channel, which analyzes narrow bandwidth aerosol returns, incorporates a Fizeau interferometer (FIZ) and is based on the fringe imaging technique (McKay, 1998). To measure the broad bandwidth return from molecules, the double-edge technique is used in the Rayleigh channel, which is made up of two sequential Fabry-Perot interferometers (FPI) (Chanin et al, 1989;Flesia and Korb, 1999).…”
Section: Measurement Principlementioning
confidence: 99%
“…The Mie channel, which analyzes narrow bandwidth aerosol returns, incorporates a Fizeau interferometer (FIZ) and is based on the fringe imaging technique (McKay, 1998). To measure the broad bandwidth return from molecules, the double-edge technique is used in the Rayleigh channel, which is made up of two sequential Fabry-Perot interferometers (FPI) (Chanin et al, 1989;Flesia and Korb, 1999).…”
Section: Measurement Principlementioning
confidence: 99%
“…For example, in a submicron-sized metal-oxide-semiconductor field-effect transistor (MOSFET), if there is a trap to capture or emit a single charge carrier, device currents in the transport channel exhibit arbitrary patterns of two-level RTSs over time. Similar RTS phenomena are discerned in superconducting qubits 14 , 15 , single photon avalanche diodes 16 , ultrasensitive biosensors 17 , and single-cell activities in ion channels 18 . Real-time dynamics in quantum electrical devices also reveal rapid jumping sequences 19 , 20 .…”
Section: Introductionmentioning
confidence: 56%
“…For example, in a submicron-sized MOSFET, if there is a trap to capture or emit a single charge carrier, device currents in the transport channel exhibit arbitrary patterns of two-level RTSs over time. Similar RTS phenomena are discerned in superconducting qubits [14], single photon avalanche diodes [15], ultrasensitive biosensors [16], and single-cell activities in ion channels [17]. Real-time dynamics in quantum electrical devices also reveal rapid jumping sequences [18], [19].…”
mentioning
confidence: 63%