Damage production in Si by MeV carbon cluster irradiation

Döbeli, M.; Ender, R.M.; Fischer, U.; Suter, M.; Synal, Hans-Arno; Vetterli, D.

doi:10.1016/0168-583x(94)95413-5

Cited by 31 publications

(3 citation statements)

References 17 publications

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“…This sample, with a total single atom fluence of 5 × 10 14 cm −2 is expected to have an amorphous layer with a thickness of ∼ 8nm extending from the surface [23]. Cs − irradiation to a To get an idea about damage saturation and the amorphisation threshold, as has been done earlier [6,24], we have fitted the three points as obtained for Si 5 irradiation to an equation of the form,…”

Section: Resultsmentioning

confidence: 99%

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Study of low energy {\rm Si}_5^- and Cs⁻implantation induced amorphization effects in Si(1 0 0)

Lenka

Joseph

Kuiri

et al. 2008

J. Phys. D: Appl. Phys.

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The damage growth and surface modifications in Si(100), induced by 25 keV Si − 5 cluster ions, as a function of fluence, φ, has been studied using atomic force microscopy (AFM) and channeling Rutherford backscattering spectrometry (CRBS). CRBS results indicate a nonlinear growth in damage from which it has been possible to get a threshold fluence, φ0, for amorphisation as 2.5 × 10 13 ions cm −2 . For φ below φ0, a growth in damage as well as surface roughness has been observed. At a φ of 1 × 10 14 ions cm −2 , damage saturation coupled with a much reduced surface roughness has been found. In this case a power spectrum analysis of AFM data showed a significant drop, in spectral density, as compared to the same obtained for a fluence, φ < φ0. This drop, together with damage saturation, can be correlated with a transition to a stress relaxed amorphous phase. Irradiation with similar mass Cs − ions, at the same energy and fluence, has been found to result in a reduced accumulation of defects in the near surface region leading to reduced surface features.

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Section: Resultsmentioning

confidence: 99%

“…To get an idea about damage saturation and the amorphization threshold, as has been done earlier [6,26], we have fitted the three points as obtained for Si 5 irradiation (namely, for S1, S3 and S5) to an equation of the form…”

Section: Subsurface Damage: Rbs/c Studiesmentioning

confidence: 99%

Study of low energy {\rm Si}_5^- and Cs⁻implantation induced amorphization effects in Si(1 0 0)

Lenka

Joseph

Kuiri

et al. 2008

J. Phys. D: Appl. Phys.

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“…Energetic clusters can produce multiple collisions by constituent particles and deposit a high energy density on a solid surface. These characteristic features of cluster ions contribute to the nonlinear effects of sputtering, energy loss, – damage, – and secondary ion emission in collisions with solid surfaces. Among cluster ion beam technologies, gas cluster ion beams (GCIBs) are one of the most promising tools for nanometer-scale surface modification including surface smoothing, , ion implantation, and growth of thin films. – Gas cluster ion beams have also been suggested for use as projectiles for low damage secondary ion mass spectrometry (SIMS) .…”

Section: Introductionmentioning

confidence: 99%

Preferential Sputtering of DNA Molecules on a Graphite Surface by Ar Cluster Ion Beam

Moritani¹,

Houzumi²,

Takeshima³

et al. 2008

J. Phys. Chem. C

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The process of sputtering by bombardment with gas cluster ions was investigated from the perspective of the kinetic energy per constituent atom (E atom ) of an incident cluster ion, which determines the threshold for the formation of craterlike defects by irradiation of an argon gas cluster ion beam (Ar-GCIB) onto a graphite surface. Furthermore, DNA molecules adsorbed on a graphite surface were preferentially sputtered by adjusting E atom of the Ar-GCIB down to this threshold, while the substrate graphite surface retained its carbon lattice structure without the formation of craterlike defects. These results indicate that a GCIB could be used as a primary ion beam for secondary ion mass spectrometry (SIMS), which would enable the preferential analysis of an adsorbed layer on a substrate without causing damage to the substrate.

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Defect production by MeV cluster impacts

Döbeli

Ames

Ender

et al. 1995

Nuclear Instruments and Methods in Physics Research Section B:

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Damage production in Si by MeV carbon cluster irradiation

Cited by 31 publications

References 17 publications

Study of low energy {\rm Si}_5^- and Cs⁻implantation induced amorphization effects in Si(1 0 0)

Study of low energy {\rm Si}_5^- and Cs⁻implantation induced amorphization effects in Si(1 0 0)

Preferential Sputtering of DNA Molecules on a Graphite Surface by Ar Cluster Ion Beam

Defect production by MeV cluster impacts

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Damage production in Si by MeV carbon cluster irradiation

Cited by 31 publications

References 17 publications

Study of low energy {\rm Si}_5^- and Cs−implantation induced amorphization effects in Si(1 0 0)

Study of low energy {\rm Si}_5^- and Cs−implantation induced amorphization effects in Si(1 0 0)

Preferential Sputtering of DNA Molecules on a Graphite Surface by Ar Cluster Ion Beam

Defect production by MeV cluster impacts

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Study of low energy {\rm Si}_5^- and Cs⁻implantation induced amorphization effects in Si(1 0 0)

Study of low energy {\rm Si}_5^- and Cs⁻implantation induced amorphization effects in Si(1 0 0)