Study of low energy {\rm Si}_5^- and Cs⁻implantation induced amorphization effects in Si(1 0 0)

Abstract

The damage growth and surface modifications in Si(100), induced by 25 keV Si − 5 cluster ions, as a function of fluence, φ, has been studied using atomic force microscopy (AFM) and channeling Rutherford backscattering spectrometry (CRBS). CRBS results indicate a nonlinear growth in damage from which it has been possible to get a threshold fluence, φ0, for amorphisation as 2.5 × 10 13 ions cm −2 . For φ below φ0, a growth in damage as well as surface roughness has been observed. At a φ of 1 × 10 14 ions cm −2 , damage saturation coupled with a much reduced surface roughness has been found. In this case a power spectrum analysis of AFM data showed a significant drop, in spectral density, as compared to the same obtained for a fluence, φ < φ0. This drop, together with damage saturation, can be correlated with a transition to a stress relaxed amorphous phase. Irradiation with similar mass Cs − ions, at the same energy and fluence, has been found to result in a reduced accumulation of defects in the near surface region leading to reduced surface features.

Effects of annealing atmosphere on ZnO− ions-implanted silica glass: synthesis of Zn and ZnO nanoparticles

“…Since it is not possible to simulate the depth profiles of cluster/compound ions in a substrate using the SRIM code, we have used the single elemental O and Zn atoms to illustrate their corresponding depth profiles in silica glass. However, the actual depths of O and Zn atoms, when implanted as a ZnO compound form, will be smaller than those obtained from the SRIM simulations of the constituent atoms when implanted individually [14,31]. The energy distributions of 50 keV ZnO in O and Zn are about 10 keV and 40 keV, respectively.…”

Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

“…F dis values in between 0 and 1 are here attributed to Si layers that consist of an epitaxial part at the bottom and an amorphous part on top. The epitaxial thickness can be estimated from the total thickness (60 nm) and F dis , by assuming that the back-scattered ions are only from the amorphous top layer [40]. Fig.…”

The mechanism of ion induced amorphization in Si

“…During implantation, with formation energies of ∼3 eV, these defects can be uniformly produced in the system and when their concentration increases beyond a certain limit the lattice becomes unstable resulting in a collapse to an amorphized state [7]. There are experimental data in support of this as well [8,9,10,11] which also suggest amorphisation in Si is more like a phase transition [12] induced by an accumulation of a sufficient number of defects. Reference [1] provides a recent review on the subject.…”