Defect production by MeV cluster impacts

Döbeli, M.; Ames, F.; Ender, R.M.; Suter, M.; Synal, Hans-Arno; Vetterli, D.

doi:10.1016/0168-583x(95)00675-3

Cited by 29 publications

(1 citation statement)

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“…We are aware of only one report for relatively heavy-ion bombardment where the ME was studied as a function of depth for Si bombarded at room temperature with Ge cluster ions with an energy of ϳ1 MeV/atom. 5 However, the authors of Ref. 5 did not keep the value of beam flux ͓in atoms/͑cm 2 s͔͒ constant during bombardment with atomic and molecular Ge ions.…”

Section: Introductionmentioning

confidence: 99%

Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions

Titov

Kucheyev

Belyakov

et al. 2001

Journal of Applied Physics

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The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon Bi 2 ions ͑the so-called molecular effect͒ is studied by Rutherford backscattering/channeling spectrometry. Results show that the damage buildup is sigmodal even for such heavy-ion bombardment at liquid nitrogen temperature. This strongly suggests that, for the implant conditions of this study, the buildup of lattice damage cannot be considered as an accumulation of completely disordered regions. Instead, damage-dose curves are well described by a cascade-overlap model modified to take into account a catastrophic collapse of incompletely disordered regions into an amorphous phase after damage reaches some critical level. Results also show that Bi 2 ions produce more lattice damage than Bi 1 ions implanted to the same dose. The ratio of lattice disorder produced by Bi 2 and Bi 1 ions is 1.7 near the surface, decreases with depth, and finally becomes close to unity in the bulk defect peak region. Parameters of collision cascades obtained using ballistic calculations are in good agreement with experimental data. The molecular effect is attributed to a spatial overlap of ͑relatively dense͒ collision subcascades, which gives rise to ͑i͒ nonlinear energy spike processes and/or ͑ii͒ an increase in the defect clustering efficiency with an effective increase in the density of ion-beam-generated defects.

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Section: Introductionmentioning

confidence: 99%