Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors

Abstract

This study investigates the effects of neutron radiation on -characteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of 2.7 × 10 6 n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

Comparative study of gamma and neutron irradiation effects on the silicon solar cells parameters

“…During the process of annealing, defects cluster and some electrical inactive defects become active in a cluster. When electrical properties are monitored during this defect rearrangement (or annealing) process, a decrease in the effectiveness of the damage with increasing time is typically observed [25,26].…”

ASSESMENT OF DAMAGE OF SOLAR HETEROJUNCTION a-SiC/c-Si INDUCED BY NEUTRON RADIATION

“…In addition to the standard tests for assessing the effect of temperature on functionality, reliability and efficiency of solar technology it is essential to carry out an assessment for resistance to various types of radiation [5]. In the space environment, solar cells are exposed to different types of radiation, such as protons, alpha particles, heavy ions, neutrons, gamma rays, electrons, and positrons [6,7].…”

Calculation of Cross Section area and Mean Free path for Interaction of Neutrons with Mammalians cell of Chinese hamster cells (V79)

“…Neutrons are much more essential than any other radiation particles due to it is a neutral particle, does not have the capability for direct ionization of matter. The elastic collision consider the main mechanism of neutron by it interaction with the matter [2,3]. The radiation beam when the incident on the matter, some of these radiations capable absorbed totally, some of these might be scattered and some of these may pass straight through without any interaction at all.…”

“…Azooz and co-worker were obtained to the higher inactivation cross section of V79 from the incident proton when the mean free path is range (2.0-5.0 nm) [6]. Azooz and Meerkhan 2009, study the inactivation of V79 cells and CHO-K1 cells were irradiated with 12 C ions, protons, 3 He ions and neutrons, which observed the mean free path λ were growing and with decline inactivation cross section σ generally; this reduce was followed an exponential form in the inactivation of V79 cells by 12 C ions and CHO-K1 cells by 3 He ions [7]. Furthermore, our study in 2010, founded the Cross Section and Mean Free Path to mammalians cell of Chinese hamster cells type V79.…”