2016
DOI: 10.5937/fmet1601099n
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Comparative study of gamma and neutron irradiation effects on the silicon solar cells parameters

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Cited by 13 publications
(10 citation statements)
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“…The effect of neutron radiation on optoelectronic devices, solar panels, photodiodes and phototransistors has been observed in this experiment and published in International Journal of Photoenergy [6] and FME Transactions [4]. Nikolić at all [4,6] confirm that, according to current theories, neutron irradiation in all samples caused degradation of their structure and deterioration of the output characteristics ( Fig.…”
Section: Experimentsupporting
confidence: 80%
See 1 more Smart Citation
“…The effect of neutron radiation on optoelectronic devices, solar panels, photodiodes and phototransistors has been observed in this experiment and published in International Journal of Photoenergy [6] and FME Transactions [4]. Nikolić at all [4,6] confirm that, according to current theories, neutron irradiation in all samples caused degradation of their structure and deterioration of the output characteristics ( Fig.…”
Section: Experimentsupporting
confidence: 80%
“…Degradation of the main parameters (I-V characteristics) of the optoelectronic devices and their improvement, as a consequence of annealing, was observed for all used samples and published in International Journal of Photoenergy [3] and FME Transactions [4]. Nikolić at all [3,4] confirm that gamma irradiation leads to degradation of the I-V characteristics and then annealing improves these characteristics ( Fig. 1 to 3.).…”
Section: Experimentsupporting
confidence: 54%
“…In Figure d, we compare the stability of our perovskite devices with previous reports of crystalline silicon solar cells. Clearly, the radiation hardness of perovskite‐based device would be much better than silicon cells which retain only 61.2% of the initial PCE after irradiation by gamma‐rays with an accumulated dose of ≈2 Mrad …”
Section: Photovoltaic Parameters Of a Perovskite Device Before And Afmentioning
confidence: 99%
“…PIN photodiodes have a higher quantum efficiency over other current read-out sensors [15]. This infers that a higher fraction of the incident photon beam contributes to the photocurrent [14,36]. The PIN photodiode’s wide intrinsic region has high charge densities [37] that implies many charge carriers per photon that strikes this region [14].…”
Section: Photodiodes/ledsmentioning
confidence: 99%