This study investigates the effects of neutron radiation on -characteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of 2.7 × 10 6 n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.
This paper presents results of radiation resistance of different types of
commercially available single- and poly-crystalline silicon solar cells.
Sample cells were subjected to gamma radiation from gamma radiation source
60Co. Characteristic parameters of solar cells were extracted from obtained
I-V curves: open circuit voltage, short circuit current, maximum power point
voltage and current, efficiency, fill factor, and series resistance. Obtained
results show the level of parameters' degradation with purpose of increasing
solar cells applications in radiation environments.
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