Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering

Demaurex, Bénédicte; Wolf, Stefaan De; Descoeudres, Antoine; Holman, Zachary C.; Ballif, Christophe

doi:10.1063/1.4764529

Cited by 214 publications

(155 citation statements)

References 33 publications

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“…[111,130] As mentioned earlier, gentle deposition on underlying layers can also be a critical factor in electrode choice and raises questions about the use of well-established physical vapor deposition (PVD) techniques, such as sputtering or pulsed laser deposition for certain applications. Sputter damage, caused by UV radiation and particle bombardment, is a known phenomenon in organic, [16] SHJ, [15] and perovskite [169] solar cells as well as flexible displays. Solutions to overcome such damage include the use of remote plasma sources, [170] the use of gently deposited buffer layers [171] or further improvements to solution-based deposition processes to improve the density and purity of TCO films to achieve high electron mobilities at low temperatures.…”

Section: Fabrication Compatibilitymentioning

confidence: 99%

Transparent Electrodes for Efficient Optoelectronics

Morales‐Masis

Wolf

Woods‐Robinson

et al. 2017

Adv Elect Materials

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349

288

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With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano‐ and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light‐emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

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Section: Fabrication Compatibilitymentioning

confidence: 99%

Transparent Electrodes for Efficient Optoelectronics

Morales‐Masis

Wolf

Woods‐Robinson

et al. 2017

Adv Elect Materials

Self Cite

349

288

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“…A shortfall of silicon heterojunction solar cells is the passivation damage and V OC loss induced by sputtering and e-beam evaporation [37]. In this sense, the contactless QuasiSteady-State Photoconductance (QSSPC) [38] Furthermore, by use of the methodology proposed by [39], we determined the emitter term of the saturation current density J 0e as a function of the effective lifetime τ eff : (1) where q is the elementary charge, n i the intrinsic carrier concentration in silicon, W the wafer thickness, N D the wafer doping concentration and Δn the minority excess carrier density (under high injection conditions).…”

Section: Transition Metal Oxide/n-si Solar Cellsmentioning

confidence: 99%

Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells

Gerling

Mahato

Morales-Vilches

et al. 2016

Solar Energy Materials and Solar Cells

351

281

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This work reports on a comparative study comprising three transition metal oxides, MoO 3 , WO 3 and V 2 O 5 , acting as front p-type emitters for n-type crystalline silicon heterojunction solar cells. Owing to their high work functions (>5 eV) and wide energy band gaps, these oxides act as transparent hole-selective contacts with semiconductive properties that are determined by oxygen-vacancy defects (MoO 3-x ), as confirmed by x-ray photoelectron spectroscopy. In the fabricated hybrid structures, 15 nm thick transition metal oxide layers were deposited by vacuum thermal evaporation. Of all three devices, the V 2 O 5 /n-silicon heterojunction performed the best with a conversion efficiency of 15.7% and an open-circuit voltage of 606 mV, followed by MoO 3 (13.6%) and WO 3 (12.5%). These results bring into view a new silicon heterojunction solar cell concept with advantages such as the absence of toxic dopant gases and a simplified low-temperature fabrication process.

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“…Also here, a crystallization step at 150-200 o C is key to get μ values up to 138 cm 2 /Vs. 7,16 Besides achieving such high mobility values, the main advantages of the ALD process are the low temperature processing (post-crystallization can take place at temperatures as low as 150 o C), the ability to conformally deposit on non-planar surfaces, and the fact that plasma-induced damage, typically encountered during sputtering ("sputter damage") 17 , is absent during ALD. 18,19 Despite the importance of the crystallization step in realizing high-mobility In2O3:H, little is known about the crystallization process itself.…”

Section: Introductionmentioning

confidence: 99%

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

Macco

Verheijen

Black

et al. 2016

Journal of Applied Physics

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Document VersionAccepted manuscript including changes made at the peer-review stage Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTHydrogen-doped indium oxide (In2O3:H) has emerged as a highly transparent and conductive oxide, finding its application in a multitude of optoelectronic devices. Recently, we have reported on an atomic layer deposition (ALD) process to prepare high quality In2O3:H. This process consists of ALD of In2O3:H films at 100 o C, followed by a solid phase crystallization step at 150-200 o C. In this work, we report on a detailed electron microscopy study of this crystallization process which reveals new insights into the crucial aspects for achieving the large grain size and associated excellent properties of the material. The key finding is that the best optoelectronic properties are obtained by preparing the films at the lowest possible temperature prior to post-deposition annealing. Electron microscopy imaging shows that such films are mostly amorphous, but feature a very low density of embedded crystallites. Upon post-deposition annealing, crystallization proceeds merely from isotropic crystal grain growth of these embedded crystallites rather than by the formation of additional crystallites. The

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Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering

Cited by 214 publications

References 33 publications

Transparent Electrodes for Efficient Optoelectronics

Transparent Electrodes for Efficient Optoelectronics

Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

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