Cyclotron Resonance Line Broadening due to Carrier-Carrier Interaction in Germanium

Kawamura, Hikaru; Saji, H.; Fukai, Masakazu; Sekido, Kenji; Imai, Isao

doi:10.1143/jpsj.19.288

Cited by 79 publications

(10 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1(a) is understood to reflect the carrier-carrier interaction as suggested by Kawamura et al 2 Since the lifetime of an exciton is shorter than that of an electron, we observe only this type of interaction some time after the photopulse. The n l/2 dependence of the first branch in Fig.…”

Section: Ka)supporting

confidence: 56%

Line Broadening of Electron Cyclotron Resonance in Germanium Due to Electron-Exciton Interaction

et al. 1971

View full text Add to dashboard Cite

A dynamical study of electron-exciton collision process in pure germanium is made by means of millimeter-wave cyclotron resonance combined with a photopulse technique. It is found that carrier recombination occurs primarily via exciton formation and subsequent annihilation process. The exciton lifetime is determined as a function of temperature.Contribution of electron-exciton interaction to the linewidth of electron cyclotron resonance in pure germanium has been investigated by means of intense photopulses combined with a boxcarconnected delayed gate circuit. It is demonstrated that the cyclotron-resonance linewidth excluding the contribution of electron-phonon interaction consists of two parts, namely, electron-exciton and electron-hole (or carrier-carrier) interactions. Both electron and exciton lifetimes are determined by varying the delay time of the gate. Intensity versus linewidth measurement of the electron resonance signal also definitely supports the existence of exciton contributions to the linewidth.An ultrahigh-purity germanium crystal lying in a 35-GHz nonresonant waveguide is illuminated with an EG & G FX-108 xenon flash tube at the repetition rate of 25 Hz. Each photopulse has a width of 1 Msec. The opening of the gate is set at 2 Msec. The magnetic field is applied along the (111) direction in the (110) plane and the linewidth of the first electron cyclotron resonance which corresponds to the cyclotron mass of 0.08ra 0 is measured. As the delay time is increased, both intensity and linewidth decrease. Results obtained at 4.2°K are shown in Figs. 1(a) and 1 (b). The contribution of elect ron-phonon scattering to the linewidth is subtracted beforehand. 1 The intensity measurement can also be regarded as a relative carrier-density measurement, and hence the notation n is introduced. The open circles in Fig. 1 (a) give the relevant linewidth, or the inverse relaxation time l/r, due to other than elect ron-phonon collisions. The variation consists of two branches: The first branch decays fast while the second decays slowly. The closed circles give the intensities of the resonance signals. The slope of the line connecting these circles yields the free carrier lifetime. Figure 1(b) gives the inverse relaxation time as a function of carrier density. Naturally we see a kink again here corresponding to Fig. 1 (a). The first branch in Fig. 1(b) is proportional to n l/2 while the second is proportional to n 2 . The second branch is obtained for shorter delay times io M h 310' 40 60 80 DELAY TIME (^sec) _^ T o JH IME H-Z o §'0'°

show abstract

Section: Ka)supporting

confidence: 56%

Line Broadening of Electron Cyclotron Resonance in Germanium Due to Electron-Exciton Interaction

et al. 1971

View full text Add to dashboard Cite

show abstract

“…Here the suffix L denotes the contribution from lattice vibrations, or phonon scatterings, c-c the carrier-carrier scatterings [8], I the ionized impurity scatterings, N the neutral impurity scatterings and so on. The contribution from phonon scatterings will need consideration at higher temperature than i0 K and perhaps when one deals with much purer materials, say those prepared by molecular beam epitaxy.…”

Section: Resultsmentioning

confidence: 99%

“…In the absence of photoexcitation, no cyclotron resonance signal was obtained, since very few electrons exist in the conduction band at 4.2 K. For a certain time interval after the photopulse, the cyclotron resonance line had a varying linewidth on account of the carrier-carrier interaction [8].…”

Section: Methodsmentioning

confidence: 99%

Far-infrared cyclotron resonance study of neutral impurity scattering in GaAs

Otsuka

Ohyama

Fujii

1984

Int J Infrared Milli Waves

View full text Add to dashboard Cite

Far-infrared laser cyclotron resonance with the help of photoexcitation enables us to separate the electron-neutral donor and electron-neutral acceptor scattering rates in GaAs. Allowing for the complication due to the coexistence of donors and acceptors, inaccuracy due to unknown contribution of phonon scatterings etc., one finds that the electron-neutral donor scattering cross-section is 2.9 x i0 -II cm 2 at 4.2 K, that is 23 times as large as the electron-acceptor scattering cross-section.

show abstract

“…where a, and a, are given by (6) and (7). I n the quantum-limit (hw, > K B / T ) , the real This is analogous to the power absorption in RLC electric circuits, where out-ofphase (reactive) impedance beconies inactive and the current and the applied voltage are in phase.…”

Section: Z -~ = a ( H W ~) -' 1~ (19)mentioning

confidence: 99%

Quantum‐limit cyclotron resonance linewidth in semiconductors

Arora¹,

Spector²

1979

Physica Status Solidi (b)

View full text Add to dashboard Cite

A quantum theory developed earlier is used to study the cyclotron-resonance linewidth for the electron scattering via the acoustic phonon, the ionized-impurity, and the piezoelectric scattering mechanisms. For the electron-acoustic-phonon scattering, the linewidth is found to increase linearly with the magnetic field, while the peak-value decreases with the increasing magnetic field. For the electron-ionized impurity scattering, the linewidth decreases with magnetic field, while the peak-value increases. The linewidth and the peak-value are independent of the magnetic field in the case of piezoelectric scattering. Under the combined effect of all three scattering mechanisms, a minimum of the linewidth as a function of the magnetic field is predicted. The critical magnetic field for which the linewidth is minimum and the minimum value of the linewidth are found to vary as the square-root of the impurity concentration. Wherever possible, comparison is made with the existing experimental data.

show abstract

Cyclotron Resonance Line Broadening due to Carrier-Carrier Interaction in Germanium

Cited by 79 publications

References 10 publications

Line Broadening of Electron Cyclotron Resonance in Germanium Due to Electron-Exciton Interaction

Line Broadening of Electron Cyclotron Resonance in Germanium Due to Electron-Exciton Interaction

Far-infrared cyclotron resonance study of neutral impurity scattering in GaAs

Quantum‐limit cyclotron resonance linewidth in semiconductors

Contact Info

Product

Resources

About