Far-infrared cyclotron resonance study of neutral impurity scattering in GaAs

Abstract

Far-infrared laser cyclotron resonance with the help of photoexcitation enables us to separate the electron-neutral donor and electron-neutral acceptor scattering rates in GaAs. Allowing for the complication due to the coexistence of donors and acceptors, inaccuracy due to unknown contribution of phonon scatterings etc., one finds that the electron-neutral donor scattering cross-section is 2.9 x i0 -II cm 2 at 4.2 K, that is 23 times as large as the electron-acceptor scattering cross-section.