Quantum‐limit cyclotron resonance linewidth in semiconductors

Arora, Vijay K.; Spector, Harold N.

doi:10.1002/pssb.2220940243

Cited by 43 publications

(6 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The decrease in p for the deformation potential is found to be faster compared to the decrease in /3 for the piezoelectric scattering. The magnetic field dependence of the mobility via deformation potential scattering is stronger compared to the piezoelectric scattering [9]. This causes a sharp variation of /3 for the deformation potential scattering with magnetic field compared to the piezoelectric scattering.…”

Section: Resultsmentioning

confidence: 96%

The Warm Electron Coefficient in n‐InSb in the Presence of a Quantizing Magnetic Field at Low Temperatures

Santra

Sarkar

1993

Physica Status Solidi (b)

View full text Add to dashboard Cite

The warm electron coefficient (p) in n-InSb in the presence of a quantizing magnetic field at low temperature is investigated theoretically to interpret the experimental results in n-InSb at TL = 4.2 K.The theoretical model used for the calculation of b considers the displaced Maxwellian distribution for electrons and other complexities such as the band nonparabolicity, the non-equipartition of phonons, the free-carrier screening, and the Landau-level broadening. The theoretical results of b obtained by the above model are found to agree qualitatively with the experimental results taking the standard material parameters of n-InSb. T o fit the theoretical values of / 3 with the experimental values, the acoustic deformation potential constant (El) is found to be 13eV which agrees with other observations.

show abstract

Section: Resultsmentioning

confidence: 96%

The Warm Electron Coefficient in n‐InSb in the Presence of a Quantizing Magnetic Field at Low Temperatures

Santra

Sarkar

1993

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…Second, according to the perturbation theory, the CR line should be narrowed with increasing the magnetic field either ∼ H −1/4 [59] or ∼ H −1 [60,61] for the dominant ion-scattering mechanism, and it should broaden as ∼ H [58,62] for the dominant phonon-scattering mechanism. The CR line measurements in n−GaAs [24,63] with the impurity concentration one order smaller than that in our samples were reported to show the line narrowing in the magnetic fields from 21 kOe to 61 kOe, confirming that a scattering on the ionized impurities is a dominant mechanism at T = 4.2 K even at low impurity concentrations.…”

Section: Ivc Effects Of the Electric Field On The Cr Line Widthmentioning

confidence: 99%

“…First, the electron mobility ∆µ = µ 1 − µ 0 > 0 is changed in the cyclotron absorption, which is testified by equal polarities of the CR photo-signal and of the photoexcited impurities. The energy dependencies of the mobility for ion µ ion ∼ E 3/2 [47] and acoustic phonon µ ph ∼ E −1/2 [58] scattering mechanisms differ each other. Since the electron energy increases amount of ω c in the CR, which coincides with the ion-scattering mechanism when ∆µ > 0 and contradicts to the phonon scattering mechanism when ∆µ < 0.…”

Section: Ivc Effects Of the Electric Field On The Cr Line Widthmentioning

confidence: 99%

Free-Electron Screening Mechanism of the Shallow Impurity Breakdown in n-GaAs: Evidences from the Photoelectric Zeeman and Cyclotron Resonance Spectroscopies

Alekperov

Nakhmedov

2019

Journal of Spectroscopy

View full text Add to dashboard Cite

A novel breakdown (BD) mechanism of shallow impurity (SI) under the electric field at low temperatures is suggested for n − GaAs samples with the donor concentrations N D = 10 14 ÷ 10 16 cm −3 and the compensation degree K = N A N D = 0.3 ÷ 0.8 with acceptors of concentration N A in the external magnetic fields up to H = 6.5 T , oriented toward parallel or perpendicular to the external electric field. Diagnosis of the BD mechanism was performed by SI Zeeman (mainly from the ground state 1s to the 2p +1 and other excitation states) and cyclotron resonance photoelectric spectroscopy (PES) methods in the wide interval of the electric field including the BD region too.The obtained results reveal that the BD electric field E BD does not correlate with K and the carriers mobility µ of the samples, which contradict to the well-known impact ionization mechanism (IIM).A serious discrepancy with IIM is that, E BD does not almost depend on the magnetic field up to H = 6.5 T when E H, though the SI ionization energy increases two times. The cyclotron resonance (CR) measurements show that the line width does not depend on the electric field for E < E BD indicating the lack of free carriers (FC) heating in contradiction with IIM. A considerable decrease of the free carriers' capture cross section (CCS) by ionized SI centers with a subsequent increase in the FC concentration n is observed by means of PES investigation of the 1s → 2p +1 and CR lines in the electric fields E ≤ E BD and at different magnetic fields, applied along H E or perpendicular H ⊥ E to the electric field. The slope of the 1s → 2p +1 line intensity on the electric field for E H does not depend on magnetic field, which is valid for E BD too. Various effects determined in the PES measurements at E = E BD , such as a drastic narrowing the 1s → 2p +1 and CR lines, a shift of the CR line to higher magnetic fields and disappearing of the lines to higher excited SI states, were clarified to be a result of screening of SI Coulomb potential by free carriers. The FC screening at the BD reduces the potential fluctuation and its influence to the PES line-shape of 1s → 2p +1 and other excited states. It is shown that an increase in the FC concentration reduces the CCS, which can be assumed as the main factor along with the increase in the ionization coefficient for the SI breakdown in the electric field. The screening length r s of the SI Coulomb potential decreases with increasing the FC concentration, reducing the CCS; the latter seems to vanish completely at r s = a * B (a * B is the effective Bohr radius), when high screening results in vanishing of all the bound states of the Coulomb potential. Note that this limit is similar to the Mott transition. Many experimental facts and our calculation of the CCS support the suggested mechanism for the SI breakdown. The well-known IIM is valid for samples with SI concentrations V (r) = e/(ǫ 0 r) + ∆V at small distances from pure Coulomb form. The value of the CS for SI in n − GaAs can be estimated to be ∆E ∼ (a 0 /a * B ) 2 ǫ...

show abstract

“…The study of cyclotron resonance absorption lineshapes is useful in obtaining information about the scattering mechanisms for the charge carriers in solids. Since Meyer and Polder (1953) discussed the linewidth for piezoelectric scattering, many theoretical (Mahan and Hopfield 1964, Zook 1964, Larsen 1966, Kawabata 1967, Saitoh and Kawabata 1967, Lodder and Fujita 1968, Miyake 1968, Tam 1969, Argyres and Sigel 1974, Arora and Spector 1979, Choi and Fujita 1981, Choi and Chung 1983, Pal and Sharma 1974, Prasad 1982, Suzuki and Dunn 1982, Ryu and Choi 1984, Ryu et a1 1985 and experimental (Baer andDexter 1964, Sawamoto 1964, Ohyama et a1 1986) studies have been made of the linewidths, dealing in particular with their dependence on the magnetic field ( B ) and temperature (T).…”

Section: Introductionmentioning

confidence: 99%

Cyclotron transition linewidths due to electron-phonon interaction via piezoelectric scattering

Ryu¹,

Yi²,

Choi³

1990

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

A theory of cyclotron transitions in electron-phonon systems is presented with the help of the projection method and applied to obtaining the cyclotron resonance linewidth for the piezoelectric polaron system. The linewidth in the moderate-temperature quantum limit is proportional to the square root of temperature and independent of the magnetic field for 'adiabatic' processes, which is in qualitative agreement with the experiment of Baer et al. and with the theoretical values of Saitoh et al. and Arora. The width for 'non-adiabatic' processes is proportional to the temperature and the inverse square root of the field. The results in the low-temperature regions in the quantum limit agree well with those of Larsen and Choi et al.

show abstract

Quantum‐limit cyclotron resonance linewidth in semiconductors

Cited by 43 publications

References 23 publications

The Warm Electron Coefficient in n‐InSb in the Presence of a Quantizing Magnetic Field at Low Temperatures

The Warm Electron Coefficient in n‐InSb in the Presence of a Quantizing Magnetic Field at Low Temperatures

Free-Electron Screening Mechanism of the Shallow Impurity Breakdown in n-GaAs: Evidences from the Photoelectric Zeeman and Cyclotron Resonance Spectroscopies

Cyclotron transition linewidths due to electron-phonon interaction via piezoelectric scattering

Contact Info

Product

Resources

About