1979
DOI: 10.1002/pssb.2220940243
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Quantum‐limit cyclotron resonance linewidth in semiconductors

Abstract: A quantum theory developed earlier is used to study the cyclotron-resonance linewidth for the electron scattering via the acoustic phonon, the ionized-impurity, and the piezoelectric scattering mechanisms. For the electron-acoustic-phonon scattering, the linewidth is found to increase linearly with the magnetic field, while the peak-value decreases with the increasing magnetic field. For the electron-ionized impurity scattering, the linewidth decreases with magnetic field, while the peak-value increases. The l… Show more

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Cited by 43 publications
(6 citation statements)
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“…The decrease in p for the deformation potential is found to be faster compared to the decrease in /3 for the piezoelectric scattering. The magnetic field dependence of the mobility via deformation potential scattering is stronger compared to the piezoelectric scattering [9]. This causes a sharp variation of /3 for the deformation potential scattering with magnetic field compared to the piezoelectric scattering.…”
Section: Resultsmentioning
confidence: 96%
“…The decrease in p for the deformation potential is found to be faster compared to the decrease in /3 for the piezoelectric scattering. The magnetic field dependence of the mobility via deformation potential scattering is stronger compared to the piezoelectric scattering [9]. This causes a sharp variation of /3 for the deformation potential scattering with magnetic field compared to the piezoelectric scattering.…”
Section: Resultsmentioning
confidence: 96%
“…Second, according to the perturbation theory, the CR line should be narrowed with increasing the magnetic field either ∼ H −1/4 [59] or ∼ H −1 [60,61] for the dominant ion-scattering mechanism, and it should broaden as ∼ H [58,62] for the dominant phonon-scattering mechanism. The CR line measurements in n−GaAs [24,63] with the impurity concentration one order smaller than that in our samples were reported to show the line narrowing in the magnetic fields from 21 kOe to 61 kOe, confirming that a scattering on the ionized impurities is a dominant mechanism at T = 4.2 K even at low impurity concentrations.…”
Section: Ivc Effects Of the Electric Field On The Cr Line Widthmentioning
confidence: 99%
“…First, the electron mobility ∆µ = µ 1 − µ 0 > 0 is changed in the cyclotron absorption, which is testified by equal polarities of the CR photo-signal and of the photoexcited impurities. The energy dependencies of the mobility for ion µ ion ∼ E 3/2 [47] and acoustic phonon µ ph ∼ E −1/2 [58] scattering mechanisms differ each other. Since the electron energy increases amount of ω c in the CR, which coincides with the ion-scattering mechanism when ∆µ > 0 and contradicts to the phonon scattering mechanism when ∆µ < 0.…”
Section: Ivc Effects Of the Electric Field On The Cr Line Widthmentioning
confidence: 99%
“…The study of cyclotron resonance absorption lineshapes is useful in obtaining information about the scattering mechanisms for the charge carriers in solids. Since Meyer and Polder (1953) discussed the linewidth for piezoelectric scattering, many theoretical (Mahan and Hopfield 1964, Zook 1964, Larsen 1966, Kawabata 1967, Saitoh and Kawabata 1967, Lodder and Fujita 1968, Miyake 1968, Tam 1969, Argyres and Sigel 1974, Arora and Spector 1979, Choi and Fujita 1981, Choi and Chung 1983, Pal and Sharma 1974, Prasad 1982, Suzuki and Dunn 1982, Ryu and Choi 1984, Ryu et a1 1985 and experimental (Baer andDexter 1964, Sawamoto 1964, Ohyama et a1 1986) studies have been made of the linewidths, dealing in particular with their dependence on the magnetic field ( B ) and temperature (T).…”
Section: Introductionmentioning
confidence: 99%