Cycle time effects on growth and transistor characteristics of spatial atomic layer deposition of zinc oxide

Nelson, Shelby F.; Levy, David H.; Tutt, Lee W.; Burberry, M. S.

doi:10.1116/1.3670878

Cited by 23 publications

(46 citation statements)

References 13 publications

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“…31 By controlling the substrate velocity, rapid ALD synthesis of ZnO can occur (up to 2 nm s −1 ), which is an order of magnitude higher than the growth rate of conventional ALD (Table I). 9,14,40 The range in growth rates shown is due to this parameter being a function of deposition temperature and residence time, which is controlled by pulse duration (conventional ALD) 15 or substrate velocity (AP-SALD). 9,40 In Table I, the growth rate of 2 nm s −1 using the AP-SALD head designed by the Eastman Kodak Company was obtained using an exposure time of 25 ms (100 ms for each cycle) at 200…”

Section: Ap-sald Reactor Designsmentioning

confidence: 99%

“…45,46 AP-SALD ZnO could be used as the semiconductor in TFTs. 9,20,40,41,47,48 This is particularly important because TFTs (acting as a switch) have become a crucial part of the electronics industry, especially for displays. Several million TFTs are produced each year for displays.…”

Section: Ap-sald Of Intrinsic and Doped Zno: Synthesis And Devicesmentioning

confidence: 99%

“…9,26,27,29,36,40 Nitrogen-doping of ZnO reduces its carrier concentration (thus increasing resistivity, as shown in Table II), 9,26 and it has been claimed that it can make ZnO p-type with post-deposition treatment (Table II). 26,57 The nitrogen dopant is introduced by mixing ammonia with the water oxidant precursor, and this is the method used for both conventional and spatial ALD ZnO:N. 26,58 The non-pyrophoric and low-cost nature of the ammonia precursor is in contrast to the expensive, pyrophoric organometallic materials that are often used as ALD and AP-SALD precursors, 5,14 and hence ammonia has been widely studied in both ALD and AP-SALD ZnO.…”

Section: B Zno Carrier Property Tuningmentioning

confidence: 99%

“…Reducing the carrier concentration through nitrogen-doping (by either conventional or spatial ALD) has been found to lower off-currents, showing this doping technique to be an important tool for improving TFT performance. 9,58 While ZnO:N films can be produced by AP-SALD and conventional ALD from the same reactants, an important advantage of AP-SALD is that it is easier to achieve short exposure times (<100 ms), since fast substrate speeds and narrow gas channels are used. 9,16 An important consequence of shorter pulse times is that the resistance of ZnO increases with decreasing pulse times.…”

Section: B Zno Carrier Property Tuningmentioning

confidence: 99%

“…5 AP-SALD has the capability of rapid, atmospheric and in-line processing in industrial environments. [5][6][7] Spatial atomic layer deposition (SALD) evolved from conventional atomic layer deposition (ALD) to overcome the limitations of ALD in a vacuum environment: although ALD can controllably produce conformal, pinhole-free thin films, 5,6,[8][9][10][11][12][13] long purge steps are needed between the alternating precursor exposure steps to prevent their intermixing in the gas phase and to ensure that they are separately chemisorbed onto the substrate ( Fig. 1(a)).…”

Section: Introduction: Atmospheric Pressure Spatial Atomic Layer Dmentioning

confidence: 99%

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Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

et al. 2015

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Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

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Section: Ap-sald Reactor Designsmentioning

confidence: 99%

Section: Ap-sald Of Intrinsic and Doped Zno: Synthesis And Devicesmentioning

confidence: 99%

Section: B Zno Carrier Property Tuningmentioning

confidence: 99%

Section: B Zno Carrier Property Tuningmentioning

confidence: 99%

Section: Introduction: Atmospheric Pressure Spatial Atomic Layer Dmentioning

confidence: 99%

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Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

et al. 2015

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Highly Robust Indium‐Free Transparent Conductive Electrodes Based on Composites of Silver Nanowires and Conductive Metal Oxides

Zilberberg

Gasse

Pagui

et al. 2013

Adv Funct Materials

146

111

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A hybrid approach for the realization of In-free transparent conductive layers based on a composite of a mesh of silver nanowires (NWs) and a conductive metal-oxide is demonstrated. As metal-oxide room-temperature-processed sol-gel SnO x or Al:ZnO prepared by low-temperature (100 ° C) atomic layer deposition is used, respectively. In this concept, the metal-oxide is intended to fuse the wires together and also to "glue" them to the substrate. As a result, a low sheet resistance down to 5.2 Ω sq −1 is achieved with a concomitant average transmission of 87%. The adhesion of the NWs to the substrate is signifi cantly improved and the resulting composites withstand adhesion tests without loss in conductivity. Owing to the low processing temperatures, this concept allows highly robust, highly conductive, and transparent coatings even on top of temperature sensitive objects, for example, polymer foils, organic devices. These Indium-and PEDOT:PSS-free hybrid layers are successfully implemented as transparent top-electrodes in effi cient allsolution-processed semitransparent organic solar cells. It is obvious that this approach is not limited to organic solar cells but will generally be applicable in devices which require transparent electrodes.

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Spatial Atomic Layer Deposition of Molybdenum Oxide for Industrial Solar Cells

Gregory

Luderer

Ali

et al. 2020

Adv Materials Inter

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alignment for charge transport. [11] TMOs have work functions ranging from 3 (ZrO 2) to 7 eV (V 2 O 5), making them suitable candidates for energy-level alignment in a variety of devices. [12] In crystalline silicon (c-Si) solar cells, TMOs are being used as transparent, dopant-free heterocontacts to the silicon absorber. [13] These have the potential to replace the heavily doped contacts found in current state-of-the-art heterojunction solar cells, [14,15] which can suffer from parasitic optical absorption and increased Auger recombination at the silicon surface. [16,17] TMOs are commonly deposited using different physical vapor deposition (PVD) techniques such as thermal evaporation and sputtering. [18,19] Atomic layer deposition (ALD) has emerged as an alternative for TMO deposition. [20] ALD offers greater thickness control and uniformity than PVD due to its reaction-limited growth process, making it ideal for applications requiring ultra-thin, conformal oxides on textured silicon surfaces. [21-24] While this technique has many advantages over PVD, depending on molecular precursor choice, it may require "energy enhancement" of the oxidant pulse, most commonly in the form of plasma or ozone, to achieve efficient growth. [25] Additionally, the growth rate of ALD is typically on the order of angstroms per Molybdenum oxide thin films are successfully deposited using spatial atomic layer deposition (SALD), a tool designed for high-throughput industrial film growth. The structural and optical properties of the film are evaluated using ultraviolet photoelectron spectroscopy, high-resolution transmission electron microscopy, and spectroscopic ellipsometry. To demonstrate the applicability of molybdenum oxide in industrial settings the films are applied as holeselective silicon heterojunction contacts for solar cells. When paired with intrinsic amorphous silicon passivation layers, implied open-circuit voltages of 699 mV are achieved. The carrier transport is unaffected by low-temperature contact anneals up to 300 °C with contact resistivities of ≈ 10 mΩ cm 2. Finally, the optical performance of silicon solar cells featuring different front hole-selective heterojunction structures are simulated. It is shown that the generation current density of heterojunction solar cells can be significantly increased with the addition of SALD molybdenum oxide contacts.

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Cycle time effects on growth and transistor characteristics of spatial atomic layer deposition of zinc oxide

Cited by 23 publications

References 13 publications

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

Highly Robust Indium‐Free Transparent Conductive Electrodes Based on Composites of Silver Nanowires and Conductive Metal Oxides

Spatial Atomic Layer Deposition of Molybdenum Oxide for Industrial Solar Cells

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