2006
DOI: 10.1109/jstqe.2006.882643
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CWDM Transmitter Module Based on Hybrid Integration

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Cited by 18 publications
(6 citation statements)
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“…To integrate photonic elements by optical circuits, spatial control of the optical and electrical properties of the underlying materials is required. There are many approaches, such as hybrid integration (Mitze et al 2006), selective regrowth (Delprat et al 1997), selective area epitaxy (Kuindersma et al 1993), and post-growth modification of the optical properties of quantum wells know as quantum well intermixing (Marsh 1993). However, selective area epitaxy as well as etching and regrowth techniques involve repeated use of expensive epitaxial growth systems whose throughput is limited, thus reducing the prospects of low-cost volume production of PICs.…”
Section: Introductionmentioning
confidence: 99%
“…To integrate photonic elements by optical circuits, spatial control of the optical and electrical properties of the underlying materials is required. There are many approaches, such as hybrid integration (Mitze et al 2006), selective regrowth (Delprat et al 1997), selective area epitaxy (Kuindersma et al 1993), and post-growth modification of the optical properties of quantum wells know as quantum well intermixing (Marsh 1993). However, selective area epitaxy as well as etching and regrowth techniques involve repeated use of expensive epitaxial growth systems whose throughput is limited, thus reducing the prospects of low-cost volume production of PICs.…”
Section: Introductionmentioning
confidence: 99%
“…Hybrid integration of DFB lasers on 4 µm SOI has already proven a promising approach for the fabrication of coarse WDM (CWDM) transmitter modules [11]. Here, we deploy a similar technique for SOAs.…”
Section: B 4 µM Soi Aowc Platformmentioning
confidence: 99%
“…Unfortunately, due to the large lattice mismatch, monolithic integration with silicon has proven to be difficult. Hybrid integration, whereby prefabricated components are integrated with the waveguides using accurate pick-and-place equipment does allow for prescreening of the lasers, but is not compatible with wafer scale integration, and hence, not suitable for use in combination with very dense optical network circuits [16]- [18]. Therefore, several research groups proposed and demonstrated an alternative integration process based on the use of wafer and/or die bonding [19]- [21].…”
Section: A Introductionmentioning
confidence: 99%