We present a SOI ring based sensor read-out system. The novelty of the architecture lies in the capability to sense the shifts of multiple peaks simultaneously with an integrated AWG spectrometer.

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A new generation of Silicon-on-Insulator fiber-to-chip grating couplers which use a silicon overlay to enhance the directionality and thereby the coupling efficiency is presented. Devices are realized on a 200 mm wafer in a CMOS pilot line. The fabricated fiber couplers show a coupling efficiency of −1.6 dB and a 3 dB bandwidth of 80 nm.

PECVD silicon nitride photonic wire waveguides have been fabricated in a CMOS pilot line. Both clad and unclad single mode wire waveguides were measured at ¼ 532, 780, and 900 nm, respectively. The dependence of loss on wire width, wavelength, and cladding is discussed in detail. Cladded multimode and singlemode waveguides show a loss well below 1 dB/cm in the 532-900 nm wavelength range. For singlemode unclad waveguides, losses G 1 dB/cm were achieved at ¼ 900 nm, whereas losses were measured in the range of 1-3 dB/cm for ¼ 780 and 532 nm, respectively.

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Abstract-High-index contrast silicon-on-insulator technology enables wavelength-scale compact photonic circuits. We report fabrication of photonic circuits in silicon-on-insulator using complementary metal-oxide-semiconductor processing technology. By switching from advanced optical lithography at 248 nm to 193 nm, combined with improved dry etching, a substantial improvement in process window, linearity, and proximity effect is achieved. With the developed fabrication process, propagation and bending loss of photonic wires were characterized. Measurements indicate a propagation loss of 2.7 dB/cm for 500 nm photonic wire and an excess bending loss of 0.013 dB/ 90• bend of 5 µm radius. Through this paper, we demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits.

Abstract:We propose hydrogenated amorphous silicon nanowires as a platform for nonlinear optics in the telecommunication wavelength range. Extraction of the nonlinear parameter of these photonic nanowires reveals a figure of merit larger than 2. It is observed that the nonlinear optical properties of these waveguides degrade with time, but that this degradation can be reversed by annealing the samples. A four wave mixing conversion efficiency of + 12 dB is demonstrated in a 320 Gbit/s serial optical waveform data sampling experiment in a 4 mm long photonic nanowire.

We present what we believe to be the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5 dB at telecom wavelength is reported. Measured nonlinear parameter is 770 W(-) m(-1), nonlinear absorption 28 W(-1)  m(-1), bandgap 1.61 eV.