Custom profiles by automated multi-step implantation

Crook, J.Philip; Current, Michael; Adibi, B.; Leung, Shee‐Ann; Larson, Larry L.

doi:10.1016/0168-583x(91)96238-g

Cited by 11 publications

(2 citation statements)

References 15 publications

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“…2 In order to perform shallow p + -junctions, a preamorphous implantation in combination with nondopant implantation and dopant implantation is one of the ULSI process possibilities, through such mechanisms as the reduction of channeling phenomena, modification of diffusion rates of dopant ions, and reduction of lattice defects during thermal cycling. [3][4][5] The understanding of the correlation between the boron atomic concentration profiles and the damage accumulation profiles in both cases of the boron single implantation and the dual implantation of boron with nondopant species is needed to integrate these techniques into ULSI processing for transistor doping.…”

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Boron Damage Profiles in Crystalline and Fluorine Preamorphized Silicon Layers

Ohno¹,

Hara

Current

2005

J. Electrochem. Soc.

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Damage accumulation profiles induced by ion implantation into single-crystalline silicon layers and preamorphized silicon layers were investigated by the photoacoustic displacement ͑PAD͒ method. Boron ions were implanted at 10 keV with 1 ϫ 10 15 ions/cm 2 and 3 ϫ 10 15 ions/cm 2 into single-crystalline silicon and preamorphized silicon. Preamorphization was achieved by fluorine ion implantation prior to boron ion implantation. These implanted layers were annealed at 950°C for 30 s by rapid thermal annealing. Damage profiles measured by PAD were compared to measured and calculated dopant and damage profiles. Effects of ion dose, annealing temperature, and combination of fluorine and boron implants were studied. Analysis of secondary ion mass spectroscopy profiles of fluorine combined with boron yielded values of 5.93 eV for F-B binding energy in a segregated region.

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Boron Damage Profiles in Crystalline and Fluorine Preamorphized Silicon Layers

Ohno¹,

Hara

Current

2005

J. Electrochem. Soc.

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“…6 Our investigation is to confirm whether or not fluorine really enhances boron diffusion in SiO2 and to obtain basic information on boron and fluorine co-doping for LSI fabrication. Since the first report t of this phenomenon, various studies 2' 3 have confirmed this penetration and have reported techniques for preventing it during the fabrication of metal oxide semiconductor (MOS) devices having boron-doped polysilicon gates.…”

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Fluorine‐Enhanced Boron Migration into Oxide from Underlying Silicon

Satō

Kawashima

1994

J. Electrochem. Soc.

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The behavior of boron and fluorine introduced into the SiO2/Si system is investigated. Fluorine introduction increases sheet resistances of boron layers in silicon after heat-treatment in both nitrogen and oxygen atmospheres. Boron depth profiles reveal that fluorine causes boron to migrate into SiO2 from silicon. This phenomenon can be explained if we assume that fluorine is incorporated into the SiQ network together with boron to lower the viscosity of SiO2. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.143.23.241 Downloaded on 2015-04-11 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.143.23.241 Downloaded on 2015-04-11 to IP

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