Fluorine‐Enhanced Boron Migration into Oxide from Underlying Silicon

Abstract

The behavior of boron and fluorine introduced into the SiO2/Si system is investigated. Fluorine introduction increases sheet resistances of boron layers in silicon after heat-treatment in both nitrogen and oxygen atmospheres. Boron depth profiles reveal that fluorine causes boron to migrate into SiO2 from silicon. This phenomenon can be explained if we assume that fluorine is incorporated into the SiQ network together with boron to lower the viscosity of SiO2. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.143.23.241 Downloaded on 2015-04-11 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.143.23.241 Downloaded on 2015-04-11 to IP

Current increase in thin gate-oxide (3.5–7.0 nm) metal–oxide–silicon structures with the boron-doped polycrystalline-silicon gates biased negatively

“…Several methods, including nitridation, were reported to suppress the penetration. [4][5][6][7][8][9][10][11] Many investigators have reported various instabilities related to boron-doped poly-silicon gate MOS structures. [12][13][14][15][16][17] Faggin et al 12 showed that the threshold voltage of MOS transistors shifts negatively when the gate voltage is positively biased.…”