Current Saturation and Oscillation in Cr-Doped GaAs

Inoue, Tetsurou; Ohyama, Masanobu

doi:10.1143/jjap.8.1362

Cited by 6 publications

(1 citation statement)

References 6 publications

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“…73,78,79,82,83 It is also feasible to bring the sample into the NDC region with fully developed current oscillations and then increase the light intensity or the photon energy. All authors who have done this agree that both the oscillation amplitude 55,79 and the domain velocity increase, 9,42,46,47,55,57,67,69,71,72,75,76,78,82,84,85 while the domain width decreases. 46,77 …”

Section: Influence Of Illuminationmentioning

confidence: 72%

Slow domains in semi-insulating GaAs

Neumann

2001

Journal of Applied Physics

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Articles you may be interested inBroadening effects and ergodicity in deep level photothermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate-, and time-domain study of defect state kinetics Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam Semi-insulating GaAs shows current oscillations if a high dc voltage is applied to a sample. These oscillations are caused by traveling high-electric-field domains that are formed as a result of electric-field-enhanced electron trapping. This article describes the various types of experiments that have been carried out with this system, including recent ones that use the electro-optic Pockels effect in order to measure the local electric fields in the sample in a highly accurate manner. An historical overview of the theoretical developments is given and shows that no satisfying theory is currently available. A list of all the required ingredients for a successful theory is provided and the experimental data are explained in a qualitative manner. Furthermore, the main electron trap in semi-insulating GaAs is the native defect EL2, the main properties of which are described.

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Section: Influence Of Illuminationmentioning

confidence: 72%

Slow domains in semi-insulating GaAs

Neumann

2001

Journal of Applied Physics

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Dispersion of the parasitic birefringence induced by lattice plane defects in ZnSe single crystals

Baillou

Lemercier

Daunay

et al. 1976

Phys. Stat. Sol. (a)

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ZnSe single crystals grown in vapour phase technique with sphalerite structure are cut according to faces (110), (110), (001) in order to study the coefficient γ41 of the electrooptic tensor. These samples exhibit, without any electric field applied, a parasitic birefringence linked to the plane crystal defects. This ZnSe is biaxial and presents a great dispersion of index as well as a variation of the position of the optic axes between the absorption threshold and 6000 Å, but the axis [110] remains always a principal axis for the dielectric tensor.

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Effet électro-optique dans les cristaux de ZnSe

Baillou¹,

Lemercier²,

Rivaud³

et al. 1973

Rev. Phys. Appl. (Paris)

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Faculté des Sciences, 40, avenue du Recteur-Pineau, 86022 Poitiers, France (Reçu le 22 novembre 1972) Résumé. 2014 Nous avons préparé par une méthode de Piper et Polich modifiée des mono cristaux cubiques de ZnSe de bonne qualité optique et qui présentent un effet électro-optique linéaire. L'étude expérimentale de cet effet a permis de constater que le coefficient électro-optique r41 du ZnSe varie avec la longueur d'onde (0,5 03BC 03BB 0,6 03BC), mais que par contre l'intensité de la modulation optique semble indépendante de 03BB et ne dépend que du champ électrique appliqué au cristal. Abstract. 2014 Cubic ZnSe crystals were grown by a modified Piper and Polich method. These crystals of good optical quality present a linear electro-optic effect. An experimental study of this effect shows that the electro-optic coefficient r41 for ZnSe varies with the wavelength (0.5 03BC 03BB 0.6 03BC), but the intensity of the optical modulation seems independent of 03BB and only depends on the electric field applied to the crystal.

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Current Saturation and Oscillation in Cr-Doped GaAs

Cited by 6 publications

References 6 publications

Slow domains in semi-insulating GaAs

Slow domains in semi-insulating GaAs

Dispersion of the parasitic birefringence induced by lattice plane defects in ZnSe single crystals

Effet électro-optique dans les cristaux de ZnSe

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