Current Pulses to Control the Conductance in RRAM Devices

García, Héctor; Dueñas, S.; Ossorio, Óscar G.; Castán, Helena

doi:10.1109/jeds.2020.2979293

Cited by 17 publications

(15 citation statements)

References 19 publications

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“…As expected, the number of cycles required to induce the abrupt switch decreased for increasing amplitudes (in absolute value) of the current pulses. The results obtained during depression differed from those described in [37,38]. The former presented a continuous depression characteristic from LRS to HRS.…”

Section: Current Pulse Programmingcontrasting

confidence: 84%

“…They reported that this hybrid scheme improved the symmetry of the conductance change in both potentiation and depression. The authors of [38] studied the control of intermediate conductance levels in RRAM devices applying current pulses. Their results showed that using current pulses was valuable to obtain linear potentiation characteristics.…”

Section: Rram As a Synaptic Elementmentioning

confidence: 99%

See 1 more Smart Citation

Programming Techniques of Resistive Random-Access Memory Devices for Neuromorphic Computing

Machado,

Manich,

Gómez-Pau

et al. 2023

Electronics

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Neuromorphic computing offers a promising solution to overcome the von Neumann bottleneck, where the separation between the memory and the processor poses increasing limitations of latency and power consumption. For this purpose, a device with analog switching for weight update is necessary to implement neuromorphic applications. In the diversity of emerging devices postulated as synaptic elements in neural networks, RRAM emerges as a standout candidate for its ability to tune its resistance. The learning accuracy of a neural network is directly related to the linearity and symmetry of the weight update behavior of the synaptic element. However, it is challenging to obtain such a linear and symmetrical behavior with RRAM devices. Thus, extensive research is currently devoted at different levels, from material to device engineering, to improve the linearity and symmetry of the conductance update of RRAM devices. In this work, the experimental results based on different programming pulse conditions of RRAM devices are presented, considering both voltage and current pulses. Their suitability for application as analog RRAM-based synaptic devices for neuromorphic computing is analyzed by computing an asymmetric nonlinearity factor.

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Section: Current Pulse Programmingcontrasting

confidence: 84%

Section: Rram As a Synaptic Elementmentioning

confidence: 99%

Programming Techniques of Resistive Random-Access Memory Devices for Neuromorphic Computing

Machado,

Manich,

Gómez-Pau

et al. 2023

Electronics

View full text Add to dashboard Cite

show abstract

“…In bipolar memristors, one voltage polarity is required to switch the device from HRS to LRS (SET process), and the opposite polarity is required to get the cell from LRS to HRS (RESET process), provided that the applied voltage exceeds certain thresholds. The SET operation is achieved when CF is formed whereas the RESET is achieved when CF is dissolved [6], [7].…”

Section: Introductionmentioning

confidence: 99%

Stochastic Resonance Exploration in Current-driven ReRAM Devices

Cirera

Vourkas

Rubio

et al. 2022

2022 IEEE 22nd International Conference on Nanotechnology (NANO)

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Advances in emerging resistive random-access memory (ReRAM) technology show promise for its use in future computing systems, enabling neuromorphic and memorycentric computing architectures. However, one aspect that holds back the widespread practical use of ReRAM is the behavioral variability of resistive switching devices. In this context, a radically new path towards ReRAM-based electronics concerns the exploitation of noise and the Stochastic Resonance (SR) phenomenon as a mechanism to mitigate the impact of variability. While SR has been already demonstrated in ReRAM devices and its potential impact has been analyzed for memory applications, related works have only focused on voltage input signals. In this work we present preliminary results concerning the exploration of SR in current-driven ReRAM devices, commercially available by Knowm Inc. Our results indicate that additive noise of amplitude σ = 0.125uA can stabilize the cycling performance of the devices, whereas higher noise amplitude improves the HRS-LRS resistance window, thus could affect positively the Bit Error Rate (BER) metric in ReRAM memory applications.

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“…As the development of semiconductor process and circuit technology, the circuit technology based on current-driven mode has received increasing attention to meet the further development of the memory and neural network circuit [1,3,13,14], meaning that we must have device models based on current-driven mode. The models of the ECM and VCM devices based on current-driven mode are very few, and are either experience parameter models [15,16] or only having the output voltage versus time characteristics of the device [17,18]. These deficiencies have obstructed and delayed the development and application of the circuit technology [19].…”

Section: Introductionmentioning

confidence: 99%

Calculation and study for the growth process and electrical characteristics of the conductive filament in nanoscale resistance memory under current-driven mode

Ke,

Dai

2023

Nanotechnology

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After investigating the behavior of ions during the growth of conductive filaments, we suggested a model for the growth process and electrical characteristics of the conductive filament under current-driven mode. In this model, the ionic displacement equation is derived by Arrhenius law, and a differential equation for the conductive filament growth has been established. We have also proved that the dielectric layer with the leakage current under current-driven mode can be equivalent to a parallel plate capacitor, which has a the equivalent dielectric constant. Consequently, the Forming/Set time of the device is gotten. At the same time, the kinetics process of ion motion is analyzed in detail, so that many microscopic parameters of the ion motion, such as the height of the potential barrier, the jump step, mobility and diffusion coefficient, can be obtained. Due to divalent and monovalent copper ions all participate in conduction, an equivalent copper ion Cuz+ is used for replacing both Cu+ and Cu2+, solving the computational complexity problem caused by multivalent metal ions. Finally, an equivalent circuit is proposed to calculate output voltage versus time characteristic. The calculation results of the model are consistent with experimental data.

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Current Pulses to Control the Conductance in RRAM Devices

Cited by 17 publications

References 19 publications

Programming Techniques of Resistive Random-Access Memory Devices for Neuromorphic Computing

Programming Techniques of Resistive Random-Access Memory Devices for Neuromorphic Computing

Stochastic Resonance Exploration in Current-driven ReRAM Devices

Calculation and study for the growth process and electrical characteristics of the conductive filament in nanoscale resistance memory under current-driven mode

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