Stochastic Resonance Exploration in Current-driven ReRAM Devices

Cirera, Albert; Vourkas, Ioannis; Rubio, Antonio; Pérez, Marcelo A.

doi:10.1109/nano54668.2022.9928748

Cited by 6 publications

(7 citation statements)

References 19 publications

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“…Future work in this context concerns statistical parameter extraction from switching performance of real ReRAM devices for the direct injection of random patterns extracted from physical measurements [17], direct comparison of simulation results with experimental data, as well as performance characterization of simulation models in terms of simulation time overhead because of variability injection.…”

Section: Discussionmentioning

confidence: 99%

A Circuit-Level SPICE Modeling Strategy for the Simulation of Behavioral Variability in ReRAM

Cayo

Vourkas

Rubio

2022

2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration (VLSI-SoC)

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The intrinsic behavioral variability in resistive switching devices (also known as "memristors" or "ReRAM devices") can be a reliability limiting factor or an opportunity for applications where randomness of resistance switching is essential, such as hardware security and stochastic computing. The realistic assessment of ReRAM-based circuits & systems towards practical exploitation requires variability-aware ReRAM modeling. In this context, here we present a versatile, circuit-level implementation strategy to incorporate cycle-tocycle (C2C) variability to the ReRAM model parameters in SPICE simulations. We evaluated the proposed approach with threshold-based models of a voltage-controlled bipolar ReRAM device and managed to reproduce the main features observed in experimental curves for different pulsed voltage inputs. With key upgrades, compared to previous approaches found in the literature, our strategy enables the enhancement of any ReRAM device model towards the exploration of new ways to make the most of the C2C ReRAM variability, and to test the robustness of any designed circuits & systems against ReRAM variability.

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Section: Discussionmentioning

confidence: 99%

A Circuit-Level SPICE Modeling Strategy for the Simulation of Behavioral Variability in ReRAM

Cayo

Vourkas

Rubio

2022

2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration (VLSI-SoC)

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“…As the development of semiconductor process and circuit technology, the circuit technology based on current-driven mode has received increasing attention to meet the further development of the memory and neural network circuit [1,3,13,14], meaning that we must have device models based on current-driven mode. The models of the ECM and VCM devices based on current-driven mode are very few, and are either experience parameter models [15,16] or only having the output voltage versus time characteristics of the device [17,18]. These deficiencies have obstructed and delayed the development and application of the circuit technology [19].…”

Section: Introductionmentioning

confidence: 99%

Calculation and study for the growth process and electrical characteristics of the conductive filament in nanoscale resistance memory under current-driven mode

Ke,

Dai

2023

Nanotechnology

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After investigating the behavior of ions during the growth of conductive filaments, we suggested a model for the growth process and electrical characteristics of the conductive filament under current-driven mode. In this model, the ionic displacement equation is derived by Arrhenius law, and a differential equation for the conductive filament growth has been established. We have also proved that the dielectric layer with the leakage current under current-driven mode can be equivalent to a parallel plate capacitor, which has a the equivalent dielectric constant. Consequently, the Forming/Set time of the device is gotten. At the same time, the kinetics process of ion motion is analyzed in detail, so that many microscopic parameters of the ion motion, such as the height of the potential barrier, the jump step, mobility and diffusion coefficient, can be obtained. Due to divalent and monovalent copper ions all participate in conduction, an equivalent copper ion Cuz+ is used for replacing both Cu+ and Cu2+, solving the computational complexity problem caused by multivalent metal ions. Finally, an equivalent circuit is proposed to calculate output voltage versus time characteristic. The calculation results of the model are consistent with experimental data.

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“…The devices were connected both with the same and with the opposite polarity (antiseries). We used a custom circuit for a voltage-controlled current source [22], [23] which allows the fine control of low levels of current. The devices under test were self-directed channel (SDC) memristors, commercially available in different packages and structures by Knowm Inc. [24], [25].…”

Section: Introductionmentioning

confidence: 99%

“…The use of such current pump was suggested in [23] and it was previously used in nanowire measurements [26]. The potential application of this circuit on memristors and its configuration have been thoroughly discussed elsewhere [21], [22], [27].…”

Section: Introductionmentioning

confidence: 99%

Using Current to Drive Two SDC Memristors Connected in Series and in Anti-Series

Cirera,

Miribel-Catala,

Rubio

et al. 2023

2023 38th Conference on Design of Circuits and Integrated Systems (DCIS)

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Networks of bipolar memristors have a rich collective switching behavior, which can be exploited in computing applications. Such a small network is formed by a pair of bipolar memristors connected in a series or anti-series configuration. The latter is known as complementary resistive switch (CRS), and has been studied for memory and for logic applications. While CRS structures have been investigated with voltage-based driving schemes, the collective behavior of current-driven networks of memristors has not yet been explored. To this end, here we present preliminary experimental results from two bipolar self-directed channel (SDC) memristors by Knowm Inc., connected in series with the same or the opposite polarity, driven by current. The amplitude of the applied current pulses varied between |0.1 uA| and |1.0 uA|. The results demonstrate that current-based driving is effective for programming simultaneously memristors that are connected in series. Moreover, the devices in the CRS configuration respond in a complementary way to the applied input current. We observed a stable and uniform performance of the devices in all our experiments. Current pulses of |0.1 uA| did not affect the state of the memristors, so they can be used to perform READ operations in current-driven resistive memory modules.

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Stochastic Resonance Exploration in Current-driven ReRAM Devices

Cited by 6 publications

References 19 publications

A Circuit-Level SPICE Modeling Strategy for the Simulation of Behavioral Variability in ReRAM

A Circuit-Level SPICE Modeling Strategy for the Simulation of Behavioral Variability in ReRAM

Calculation and study for the growth process and electrical characteristics of the conductive filament in nanoscale resistance memory under current-driven mode

Using Current to Drive Two SDC Memristors Connected in Series and in Anti-Series

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