Current oscillations at high electrical fields in the two-dimensional electron gas in GaAs/AlGaAs heterostructures

Hendriks, Peter; Staring, Aam Toine; Welzenis, van Rg Robert; Prost, W.; Heime, K.; Schlapp, W.; Weimann, G.

doi:10.1063/1.101030

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…There are clear Coulomb oscillations and they beat with two different periods (4.5 and 4l mV). Most probably, there will be an unintentional dot in the channel layer mainly due to random distribution of dopants, which often occurred in highly doped channel layers [3]. Figure 3 shows the 4.2 K Ips-Vps and the differential conductance (dlos / dVDs)-VDs curvos at V6s --5l2 mY.…”

Section: Methodsmentioning

confidence: 99%

Fabrication and characterization of a single electron transistor using n+ GaAs

Son¹,

Choi²,

Cho³

et al. 2002

Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials

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Section: Methodsmentioning

confidence: 99%

Fabrication and characterization of a single electron transistor using n+ GaAs

Son¹,

Choi²,

Cho³

et al. 2002

Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials

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Observation of current filaments in GaAs/AlxGa1−xAs heterostructures using a time-resolved imaging technique

Zwaal

Vermeulen

Hendriks

et al. 1992

Journal of Applied Physics

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We developed a time-resolved optical beam induced current (TROBIC) technique, and performed time-resolved current imaging experiments on GaAs/AlxGa1−xAs heterostructures under high electric field conditions. These experiments are the first time-resolved imaging experiments of current patterns in a two-dimensional semiconductor structure. We attribute the current patterns observed in the TROBIC images to the formation of current filaments in the AlxGa1−xAs layer, parallel to the two-dimensional electron gas (2DEG). We show that even in samples where the two-dimensional electron gas and the contacts to the 2DEG are perfectly ohmic and homogeneous, current filaments can still develop in high electric fields. These temporal and spatial instabilities in the AlxGa1−xAs layer strongly affect the high-field transport properties of the heterostructure.

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Hot electrons in low-dimensional structures

1991

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The properties of hot electrons in systems where electrons and phonons experience quantum confinement are reviewed. The modifications to the behaviour of electrons and phonons brought about by confinement are described, particularly with reference to the principal scattering mechanisms. The latter include the interaction with longitudinal optical phonons and plasmons, along with carrier-carrier effects. Some conflict in the literature concerning Fuchs-Kliewer polaritons is discussed. Low-temperature interactions with acoustic phonons are described. A central topic is that of energy relaxation, and the experimental and theoretical data relating to this form a large part of the review. Energy relaxation mechanisms in the femtosecond to nanosecond regimes, including intersubband and well-capture processes, are eventually summarized. An equally large section deals with hot-electron transport; in which negative differential resistance and other instabilities associated with parallel transport are discussed before turning to ballistic transport and impact ionization.

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Current oscillations at high electrical fields in the two-dimensional electron gas in GaAs/AlGaAs heterostructures

Cited by 3 publications

References 8 publications

Fabrication and characterization of a single electron transistor using n+ GaAs

Fabrication and characterization of a single electron transistor using n+ GaAs

Observation of current filaments in GaAs/AlxGa1−xAs heterostructures using a time-resolved imaging technique

Hot electrons in low-dimensional structures

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