Chargelocating techniques for the study of trapping phenomena in GaAs:(Al, Ga)As heterostructures J.Pulsed current-voltage measurements on modulation-doped GaAs/Al,Gai -3s heterostructures are presented at electric fields up to 2 kV/cm. At fields between 0.5 and 2.0 kV/cm we observe up to three well-defined avalanche type current jumps as a fur -tion of time. These current jumpsshow hysteresis effects as a function of the electric field. At even higher electric fields the current becomes irregular and we observe chaotic behavior. To explain the current instabilities we assume that at high electric fields electrons are injected into the Al,Gai+As layer parallel to the two-dimensional electron gas. The injected electrons subsequently cause avalanche ionization of occupied DX centers in the Al,Gar -,As layer. Due to this process, a current filament is created with an exceptionally high mobility which is about 2~ lo4 cm"/V s at 10 K.
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