Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO

Abstract

An ultraviolet light-emitting diode (LED) operating at room temperature was realized using a p–n heterojunction composed of transparent conductive oxides, p-SrCu2O2 and n-ZnO. Multilayered films prepared by a pulsed-laser deposition technique were processed by conventional photolithography with the aid of reactive ion etching to fabricate the LED device. A rather sharp emission band centered at 382 nm was generated when a forward bias voltage exceeding the turn-on voltage of 3 V was applied to the junction. The emission may be attributed to a transition associated with the electron–hole plasma of ZnO.

Preparation of Highly Textured ZnO Thin Films by Pulsed Electron Deposition

“…[1][2][3][4][5][6][7][8][9] Many approaches have been developed to fabricate ZnO nanostructures and high quality thin films for applications in a diversity of fields, such as molecular beam epitaxy (MBE), 10) metal-organic chemical vapor deposition (MOCVD), 11) pulsed laser deposition (PLD), 12) and physical vapor transportation. 13) Mostly ZnO thin films suffer from the crystal quality and various kinds of defects, such as zinc interstices (Zn i ), zinc vacancies (V Zn ), oxygen interstices (O i ), and oxygen vacancies (V O ).…”

Investigation of laser-ablated ZnO thin films grown with Zn metal target: A structural study

“…This semiconductor is very attractive because it has many applications such as transparent conductive contacts, solar cells, laser diodes, ultraviolet lasers, thin films transistors and others [2][3][4][5][6][7][8] .…”

Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3

“…To date, Cu-based oxides were mainly used for intrinsically p-type doped materials, taking advantage of d 10 configuration of the Cu + state. Using such Cu-based p-type oxides has resulted in successful fabrication of various transparent optoelectronic devices, such as ultraviolet (UV) light-emitting diodes, 16 transparent field-effect transistors, 14,17 and UV photodetectors. 18,19 Recently LaRhO 3 was reported newly to be a p-type semiconductor with 1.3 eV bandgap.…”