Current Coupling Effect in MIS Tunnel Diode with Coupled Open-Gated MIS Structure

2017

ECS Trans.

To study the current coupling effect, novel neighboring MIS tunnel diodes were fabricated and examined. It is found that the saturation dark or light current of MIS tunnel diode can be elevated with more neighboring floating MIS structures, resulting from the lateral diffusion. And coupling also makes saturation current of those neighboring structures the same despite their various sizes. An irradiance of 6 mW/cm 2 and gradually-minimizing distance both give rise to the greater saturation current for central MIS diode. TCAD simulation also shows the existence of lateral diffusion; furthermore, the fringing field would increase the efficacy of drift current under nano-scale distance among devices.

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 92%

MIS(p) Saturation Tunneling Current Controlled by Neighboring MIS Inversion Level Via Coupling Effect

Yang

2017

ECS Trans.

“…The saturation current, Isat, can be expressed as equation [1] 𝐼 𝑎 = 𝐴 * 𝐴 𝑃 𝑇 2 exp − 𝑞𝜙 ℎ * 𝑘𝑇 ⁄ [1] where 𝜙 ℎ * is the effective Schottky barrier height, 𝐴 * is the effective Richardson constant,𝐴 is the effective area that the current flows through, 𝑃 is the oxide tunneling probability. It was supposed that the increase of electron diffusion from a gate MOS capacitor will cause the decrease of the effective Schottky barrier height and lead to the increase of saturation current (2). Furthermore, transistor characteristic of this structure was also proposed (3).…”

Section: Introductionmentioning

confidence: 99%

On/Off Current Ratio Enhancement by Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor

Chan

2018

ECS Trans.

Transistor characteristic was observed in a metal-insulator-semiconductor (MIS) tunnel diode with a nearby gate electrode. Both MIS tunnel diode and gate are Al/SiO2/Si(p) structure. We call this structure as gate-controlled MIS tunnel transistor. In this work, the relationship between couple effect and the gap distance was studied. By reducing the gap distance, the couple effect is enhanced and leads to the increase of Ion and decrease of Ioff. Enhancement of the on/off current ratio can also be expected. In short, gap distance plays an important role in the current behavior of a gate-controlled MIS tunnel transistor.

Coupling sensitivity in concentric metal–insulator–semiconductor tunnel diodes by controlling the lateral injection electrons

Chen

2020

AIP Advances

Coupling sensitivity between two Al–SiO2–pSi metal–insulator–semiconductor tunnel diodes (MISTDs) was examined by sweeping bias voltage on one MISTD and detecting ground current or floating voltage at another nearby MISTD with the substrate being grounded when performing the measurement. A strong coupling phenomenon between two concentric MISTDs was observed in this work. The experiment shows that the coupling sensitivities have a maximum value at a range of about −0.4 V to −0.7 V and turn to minimum at about the flat band voltage (∼−0.9 V) when bias was swept from 0 to −1 V. The simulation result also shows a maximum lateral diffuse current when the MISTD was biased at about −0.7 V and turns to a small value near the flat band voltage. It was speculated that the lateral electron flow due to piled-up injection electrons is the origin of the observed highly sensitive coupling phenomenon. A possible mechanism was proposed to explain the turnaround phenomenon.