MIS(p) Saturation Tunneling Current Controlled by Neighboring MIS Inversion Level Via Coupling Effect

Abstract

To study the current coupling effect, novel neighboring MIS tunnel diodes were fabricated and examined. It is found that the saturation dark or light current of MIS tunnel diode can be elevated with more neighboring floating MIS structures, resulting from the lateral diffusion. And coupling also makes saturation current of those neighboring structures the same despite their various sizes. An irradiance of 6 mW/cm 2 and gradually-minimizing distance both give rise to the greater saturation current for central MIS diode. TCAD simulation also shows the existence of lateral diffusion; furthermore, the fringing field would increase the efficacy of drift current under nano-scale distance among devices.