On/Off Current Ratio Enhancement by Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor

Abstract

Transistor characteristic was observed in a metal-insulator-semiconductor (MIS) tunnel diode with a nearby gate electrode. Both MIS tunnel diode and gate are Al/SiO2/Si(p) structure. We call this structure as gate-controlled MIS tunnel transistor. In this work, the relationship between couple effect and the gap distance was studied. By reducing the gap distance, the couple effect is enhanced and leads to the increase of Ion and decrease of Ioff. Enhancement of the on/off current ratio can also be expected. In short, gap distance plays an important role in the current behavior of a gate-controlled MIS tunnel transistor.