Current annealing and electrical breakdown of epitaxial graphene

Abstract

Temperature dependence of reversible switch-memory in electron field emission from ultrananocrystalline diamond Appl. Phys. Lett. 101, 173116 (2012) Controlling the current flux in magnetic-barrier induced graphene waveguide Appl. Phys. Lett. 101, 163104 (2012) Resonant tunneling through double barrier graphene systems: A comparative study of Klein and non-Klein tunneling structures J. Appl. Phys. 112, 073711 (2012) Electronic scattering of pseudo-magnetic field induced by local bump in graphene

Monolithic circuits with epitaxial graphene/silicon carbide transistors

“…Due to its extremely high charge carrier mobility and the large current carrying capabilities graphene is considered as a material for future electronics . Consequently, graphene has been used as channel material for fast field effect transistors , which however displayed poor ON/OFF ratios due to the lack of an electronic bandgap in graphene .…”

Synthesis of Few‐Layer Graphene‐on‐Insulator Films by Controllable C4F8 Plasma Etching SiC

“…Graphene has outstanding electronic properties, [1,2] in particular, its excellent charge-carrier mobility up to the order of 10 6 cm 2 V s À1 , [3] its extremely high current stability in excess to 4-6 mA mm À1 , [4] its high-temperature stability, and its high thermal conductivity. [5] These properties make it ideal for applications in electronics.…”

A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel

“…However, for the semiinsulating wafers frequently used for epitaxial graphene APPLIED PHYSICS LETTERS 100, 122102 (2012) investigations, the resistance is at least in the TX-regime. 4 In devices fabricated on wafer A, a current pathway is offered in the N implanted layer. The n-doping has two favorable consequences: First, the injection barrier between graphene and SiC is relatively low.…”

“…In particular, it has high charge carrier mobilities 1,2 and extremely high current stability. 3,4 Highfrequency transistors and circuits have been demonstrated with amplifier functionality. 5 However, a reliable switch with large on/off ratio is still not realized.…”