Cubic GaN grown on (001) GaAs substrate by RF plasma assisted gas source MBE

Sung, Li Wei; Lin, H. H.; Chia, Chih Ta

doi:10.1016/s0022-0248(02)01289-7

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Introduction3

Relationship Between Coverage and Growth Condition1

Combinatorial Growth1

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2006

2021

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Cited by 14 publications

(9 citation statements)

References 24 publications

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“…Furthermore, it is noted that the maximum point of Ga coverage is shifted toward the Ga-rich condition from V/III ¼ 1 due to the small adsorption probability of Ga at low Ga BEP. Although investigation of the 1 growth cycle is necessary to compare the calculated results with experimental relationships between growth rate and V/III ratio, the obtained tendency between V/III ratio and change in coverage during the initial growth stage agrees with the experimental relationship [15].…”

Section: Relationship Between Coverage and Growth Conditionsupporting

confidence: 72%

Ab initio-based approach on initial growth kinetics of GaN on GaN (001)

Kangawa¹,

Matsuo²,

Akiyama³

et al. 2007

Journal of Crystal Growth

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Section: Relationship Between Coverage and Growth Conditionsupporting

confidence: 72%

Ab initio-based approach on initial growth kinetics of GaN on GaN (001)

Kangawa¹,

Matsuo²,

Akiyama³

et al. 2007

Journal of Crystal Growth

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“…[5,18], the Ga and N fluxes are not uniformly distributed on the substrate holder in our MBE system, as shown in Fig. 3a.…”

Section: Combinatorial Growthmentioning

confidence: 94%

Role of excited nitrogen species in the growth of GaN by RF–MBE

Kikuchi

Somintac

Ariyada³

et al. 2006

Journal of Crystal Growth

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“…GaN is known to be highly stable in the hexagonal wurtzite structure [12], but the growth of the cubic (zinc-blende) phase has also been reported in thin films [13][14][15][16]. Zincblende-wurtzite polytypism is well known in semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Structural study of gallium oxynitrides prepared by ammonolysis of different oxide precursors

Cailleaux¹,

Lucas²,

Merdrignac‐Conanec³

et al. 2009

J. Phys. D: Appl. Phys.

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A comparative structural study has been carried out on gallium oxynitride powders using XRD and Raman spectroscopy. Gallium oxynitrides have been prepared by ammonolysis of either NiGa2O4 ternary oxide or the citrate method-derived amorphous oxide. Their crystal chemistry is different and appears to be influenced by the nature of the oxide precursor: whereas gallium oxynitride obtained from amorphous gallium oxide crystallizes with the common wurtzite structure, gallium oxynitride obtained from NiGa2O4 crystallizes with an original structure that we have identified as the carborundum II (B6) structure type or 6H–SiC. As far as we know, this is the first 6H–SiC structure found in gallium oxynitride powders.

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Cubic GaN grown on (001) GaAs substrate by RF plasma assisted gas source MBE

Cited by 14 publications

References 24 publications

Ab initio-based approach on initial growth kinetics of GaN on GaN (001)

Ab initio-based approach on initial growth kinetics of GaN on GaN (001)

Role of excited nitrogen species in the growth of GaN by RF–MBE

Structural study of gallium oxynitrides prepared by ammonolysis of different oxide precursors

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