Structural study of gallium oxynitrides prepared by ammonolysis of different oxide precursors

Cailleaux, X.; Lucas, M.C. Marco de; Merdrignac‐Conanec, Odile; Tessier, Franck; Nagasaka, Kazuteru; Kikkawa, Shinichi

doi:10.1088/0022-3727/42/4/045408

Cited by 17 publications

(16 citation statements)

References 26 publications

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“…Experimental and theoretical investigations on the ternary system Ga-O-N confirmed that no crystalline or amorphous oxynitride phases appear during these reactions [17]. Synthesis of GaON was successfully obtained by nitridation under NH 3 flow of other gallium precursors such as Ga(OH) 3 [7,12] or NiGa 2 O 4 [5,6]. Mn 2+ -and Li + -doped GaON were synthesized by nitridation of amorphous oxides obtained by the citrate route [8,9].…”

Section: Oxinitreto De Zinco E Gálio Foi Sintetizado Por Meio Da Nitrmentioning

confidence: 99%

“…Considering these results and those reported [6], we have chosen to index all of the reflections with a hexagonal würtizte-type structure according to the JCPDS file 032-0398. This card is related to a gallium oxynitride compound with a space group P6 3 mc and a = a 0 =3.186 Å and c = 3c 0 = 15.530 Å where a 0 and c 0 are the GaN parameters.…”

Section: [Figura 3: Padrão De Difração De Raios X Dos Pós Após a Nitrmentioning

confidence: 99%

“…Less studied but also highly attractive is gallium oxynitride (hereafter called "GaON"), which has demonstrated a high potential for gas sensing and photocatalysis [5][6][7]. Improved or hybridized properties may also be obtained by doping "GaON" with different kinds of elements [8].…”

Section: Introductionmentioning

confidence: 99%

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Zinc-gallium oxynitride powders: effect of the oxide precursor synthesis route

et al. 2013

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Zinc-gallium oxynitride powders (ZnGaON) were synthesized by nitridation of ZnGa 2 O 4 oxide precursor obtained by polymeric precursors (PP) and solid state reaction (SSR) methods and the influence of the synthesis route of ZnGa 2 O 4 on the final compound ZnGaON was investigated. Crystalline single phase ZnGa 2 O 4 was obtained at 1100 o C / 12 h by SSR and at 600 o C / 2 h by PP with different grain sizes and specific surface areas according to the synthesis route. After nitridation, ZnGaON oxynitrides with a GaN würtzite-type structure were obtained in both cases, however at lower temperatures for PP samples. The microstructure and the specific surface area were strongly dependent on the oxide synthesis method and on the nitridation temperature (42 m 2 g -1 and 5 m 2 g -1for PP and SSR oxides treated at 700 °C, respectively). The composition analyses showed a strong loss of Zn for the PP samples, favored by the increase of ammonolysis temperature and by the higher specific surface area.

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Section: Oxinitreto De Zinco E Gálio Foi Sintetizado Por Meio Da Nitrmentioning

confidence: 99%

Section: [Figura 3: Padrão De Difração De Raios X Dos Pós Após a Nitrmentioning

confidence: 99%

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Zinc-gallium oxynitride powders: effect of the oxide precursor synthesis route

et al. 2013

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“…Its crystal structure has been expected to be 6H polytypoid, because its Raman spectrum showed characteristics for both wurtzite (2H) and zinc-blende (3C) 16 . Such structural characteristics can be observed directly in single crystalline products.…”

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confidence: 99%

Nanowire of hexagonal gallium oxynitride: Direct observation of its stacking disorder and its long nanowire growth

Masubuchi

Yamaoka

Tohei

et al. 2012

Journal of the European Ceramic Society

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The crystal structure of gallium oxynitride nanowire was investigated by using scanning transmission electron microscopy. Gallium oxynitride nanowire was directly observed to have a biphasic wurtzite and zinc-blende structure. There was a stacking disorder of several atomic layers between the two phases. The new biphasic nanowire formed due to the presence of Ni in starting material because its nitride has a zinc-blende structure whereas gallium oxynitride has the wurtzite structure. Crystal growth of gallium oxynitride nanowires was studied using seed crystals. Seed crystals and amorphous gallium oxide precursors were annealed under different ammonia flow rates to grow gallium oxynitride nanowires. The nanowires grew to length of 150 m but they did not grow laterally when the ammonia flow rate was 50 mL/min.

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“…57) Our group has prepared wurtzite-type GaON with a chemical composition of (Ga 0.89 0.11 )(O 0.33 N 0.67 ) by ammonolysis of amorphous gallium oxide precursors obtained through the citrate route, 58) where the symbol indicates a gallium site vacancy. Some kinds of 3d transition metals were doped into the GaON to study the magnetic properties by using similar preparation methods.…”

Section: )41)mentioning

confidence: 99%

Synthesis, structure and properties of new functional oxynitride ceramics

Masubuchi

2013

J. Ceram. Soc. Japan

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Novel metal oxynitrtides have been prepared by nitridation of amorphous metal oxide precursors obtained through citrate route. Their crystal structure, especially in O/N distribution and local bonding characteristics has been analyzed by using neutron diffraction, X-ray absorption and transmission electron microscopy, to investigate their electric and optical properties. In dielectric SrTaO 2 N, crystal structure refinement suggested the short range O/N ordering and local tilting of cis-TaO 4 N 2 octahedra, resulting in its unusual large permittivity. Its dense ceramics were sintered with SrCO 3 additive and exhibited superior dielectric constant above 1 © 10 4 at room temperature. New biphasic wurtzite and zinc-blende structure of gallium oxynitride nanowire was observed by using transmission electron microscopy. As-grown long gallium oxynitride nanowire exhibited a characteristic broad UV emission at 4.3 eV in its cathodoluminescene spectrum. New oxynitride phosphor having magnetoplumbite structure, LaAl 12 (O,N) 19 :Eu showed photoluminescence emission peak splitting due to Eu 2+ site splitting to two crystallographic sites induced by the two kinds of anions in its crystal structure.

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Structural study of gallium oxynitrides prepared by ammonolysis of different oxide precursors

Cited by 17 publications

References 26 publications

Zinc-gallium oxynitride powders: effect of the oxide precursor synthesis route

Zinc-gallium oxynitride powders: effect of the oxide precursor synthesis route

Nanowire of hexagonal gallium oxynitride: Direct observation of its stacking disorder and its long nanowire growth

Synthesis, structure and properties of new functional oxynitride ceramics

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