Zinc-gallium oxynitride powders: effect of the oxide precursor synthesis route

Abstract

Zinc-gallium oxynitride powders (ZnGaON) were synthesized by nitridation of ZnGa 2 O 4 oxide precursor obtained by polymeric precursors (PP) and solid state reaction (SSR) methods and the influence of the synthesis route of ZnGa 2 O 4 on the final compound ZnGaON was investigated. Crystalline single phase ZnGa 2 O 4 was obtained at 1100 o C / 12 h by SSR and at 600 o C / 2 h by PP with different grain sizes and specific surface areas according to the synthesis route. After nitridation, ZnGaON oxynitrides with a GaN würtzite-type structure were obtained in both cases, however at lower temperatures for PP samples. The microstructure and the specific surface area were strongly dependent on the oxide synthesis method and on the nitridation temperature (42 m 2 g -1 and 5 m 2 g -1for PP and SSR oxides treated at 700 °C, respectively). The composition analyses showed a strong loss of Zn for the PP samples, favored by the increase of ammonolysis temperature and by the higher specific surface area.

Sonochemical Assisted Solvothermal Synthesis of Gallium Oxynitride Nanosheets and their Solar-Driven Photoelectrochemical Water-Splitting Applications

“…Gallium compounds12345 including gallium nitride (GaN), gallium oxide (Ga 2 O 3 ) and more recently gallium oxynitrides (GaON/Ga 3 O 3 N/Ga x O y N z ) have been known for their semiconducting and optoelectronic properties6789. These gallium materials in different morphologies have enlightened ample of applications e.g.…”

Nitridation of metal salen-derived ZnGa₂O₄ particles using a solid nitrogen source

“…Figueredo et al reported on the significant change of morphology after the nitridation process of ZnGa2O4 precursor using NH3 gas [11]. For our 2D ZnGa2O4 precursor, it is postulated that the micrometer scale plate-like oxides coarsened to generate such a 3D cauliflower-like morphology as a result of the conversion of crystal structures from spinel phase of ZnGa2O4 to wurtzite phase of (Ga1-xZnx)(N1-xOx) [1], although the detailed mechanism is not clear at present.…”

“…This result suggested that the nitridation of single-phase ZnGa2O4 does not produce an oxynitride compound [2]. The loss of zinc may cause a reduction of ZnO to metallic Zn during the nitridation [1,11,16,17], suggesting that the presence of zinc oxide is required to efficiently synthsize (Ga1-xZnx)(N1-xOx). Therefore, ZnO-rich ZG2-1 and ZG1-1 samples were used for the nitridation.…”

“…They evaluated oxide precursors which synthesized by a conventional solid state reaction (SSR) from a ZnO and Ga2O3 mixture and by a polymeric precursor method. Different morphologies of oxide precursors were observed and they concluded that the shape directly affects to a diffusion of NH3 and nitridation process [11]. The formation of oxynitride compounds often requires a NH3 gas at T > 1073 K [4,6,7,8,9,10,11].…”

“…Different morphologies of oxide precursors were observed and they concluded that the shape directly affects to a diffusion of NH3 and nitridation process [11]. The formation of oxynitride compounds often requires a NH3 gas at T > 1073 K [4,6,7,8,9,10,11]. Recently, we have demonstrated a synthesis of GaN by the reaction of Ga2O3 with Li3N as a solid nitrogen source that can complete the reaction at a relatively low temperature of 823 K. Moreover, the solid nitrogen source can be easily handled without using the gaseous nitrogen source [13].…”