Role of excited nitrogen species in the growth of GaN by RF–MBE

Kikuchi, Toshiyuki; Somintac, Armando; Ariyada, Osamu; Wada, M.; Ohachi, T.

doi:10.1016/j.jcrysgro.2006.04.019

Cited by 21 publications

(26 citation statements)

References 20 publications

(19 reference statements)

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“…As use for a template of group III nitrides, nitridation of Si is an attractive theme. An inductively coupled (ICP) radio frequency (RF) discharge is a best nitrogen source for the growth of group III nitrides by a molecular beam epitaxial (MBE) method because the high efficiency of nitrogen atom production under ultra-pure condition [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

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Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates

Ohachi

Yamabe

Shimomura

et al. 2009

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

“…Formation of (N+N*) flux and changing discharge modes was conducted under a time sequence controller of RF power source. Discharge spectra were monitored by a CCD spectrometer (Hamamatsu Photonics PMA-1) from a back port of the nitrogen cell [1]. Optical emission intensity (OES) is a measure of the production of active nitrogen species.…”

Section: Introductionmentioning

confidence: 99%

Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates

Ohachi

Yamabe

Shimomura

et al. 2009

Journal of Crystal Growth

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“…The production of the chemically active nitrogen atoms N+N* was performed by IRFS-501RF nitrogen radical source made by Arios Inc. under the discharge condition of 1.38 sccm and up to 500 W of HB mode [4][5][6][7][8]. In situ measurement of ADS N+N* atoms was performed in a VG80H MBE growth chamber or a chamber for specially designed measurement chamber [6].…”

Section: Experimental 21 Equipmentsmentioning

confidence: 99%

“…Wistey and his group monitored ion flux but not atom flux during MBE growth using a Langmuir-like probe, which was a grid or filament electrode of an ionization gauge of MBE system [4]. The present authors also studied measurement of active nitrogen atoms N+N*, which consist of ground state nitrogen atoms N and excited state nitrogen atoms N*, in a radio frequency induction coupled plasma (rf-ICP) discharge for the growth of group III nitrides and their alloys [5,6]. The rf-ICP discharge has two discharge modes such as low brightness (LB) and high brightness (HB) discharge modes.…”

Section: Introductionmentioning

confidence: 99%

In situ measurement of adsorbed nitrogen atoms for PA‐MBE growth of group III nitrides on Si

Ohachi

Yamabe

Yamamoto

et al. 2011

Phys. Status Solidi C

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An atom probe of two parallel electrodes is proposed to monitor adsorbed (ADS) nitrogen atoms in situ during growth of β‐Si3N4 using indirect exposure of effusing active nitrogen beam from the radio frequency induction coupled plasma cell. The β‐Si3N4 film is a component of a double buffer layer (DBL) AlN(0001)/β‐Si3N4/Si(111) to grow high quality the group III nitrides and their alloys on Si. Atom current between the parallel electrodes corresponds to flux of the ADS nitrogen atoms on the inside surface at the atom potential, VA. The ADS atom current received influence of wall and shutter of the cell, because adsorption of nitrogen atom depended wall condition such as temperature and the concentration of adatoms on the wall (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Radio frequency (rf) inductively coupled plasma source has extensively been used as nitrogen activator source for the production of active nitrogen species [4,6]. The rf-plasma sources are advantageous as they create higher amount of favourable active nitrogen species (N or N*) compared to the molecular nitrogen (N 2 or N 2 þ ) [5]. It was reported that the rf-plasma sources enables high growth rate, low ion damage, high temperature operation and superior optical properties [9e11].…”

Section: Introductionmentioning

confidence: 99%

Influence of active nitrogen species on surface and optical properties of epitaxial GaN films

Aggarwal

Krishna

Mishra

et al. 2016

Journal of Alloys and Compounds

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a b s t r a c tInfluence of active nitrogen species on surface and optical properties of homoepitaxial GaN films grown on GaN epilayers has been investigated. The epitaxial GaN films were grown at varying plasma powers (350e500 W) under identical growth conditions. High resolution X-Ray diffraction, Field Emission Scanning Electron Microscopy, Atomic Force Microscopy and Photoluminescence measurements were employed to characterize the structural, morphological and optical properties of the grown GaN films. High plasma power (500 W) lead to an increment in active nitrogen radicals and yielded high crystalline quality with reduced dislocations compared to low plasma power (350, 400 W) which divulge the presence of metallic gallium on the surface and low roughness. The valence band maximum position, electron affinity and ionization energy of the films increased with increment in plasma power. PL measurements revealed narrow and intense band to band edge emission with negligible defect related yellow band peak for the sample grown at 500 W. The analysis conveyed that higher amount of active nitrogen species encouraged good optical properties with insignificant defect states which can be employed for the fabrication of high performance optoelectronic & photovoltaic devices.

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Role of excited nitrogen species in the growth of GaN by RF–MBE

Cited by 21 publications

References 20 publications

Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates

Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates

In situ measurement of adsorbed nitrogen atoms for PA‐MBE growth of group III nitrides on Si

Influence of active nitrogen species on surface and optical properties of epitaxial GaN films

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