CuAlSe2 chalcopyrite epitaxial layers grown by low-pressure metalorganic chemical vapor deposition

Chichibu, S. F.; Shirakata, Sho; Iwai, A.; Matsumoto, Satoru; Higuchi, Hirofumi; Isomura, Shigehiro

doi:10.1016/0022-0248(93)90207-d

Cited by 26 publications

(7 citation statements)

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“…Few papers have reported on the epitaxial growth of chalcopyrite semiconductors on ͑110͒ substrates. [7][8][9][10] CuInSe 2 has been grown by flash evaporation 7 on GaAs͑110͒. Igarashi used the halogen transport method to grow CuInSe 2 on ͑110͒ GaAs and GaP 8 and CuGaS 2 on ͑110͒ GaAs.…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial growth of Cu(In, Ga)Se2 on GaAs(110)

Liao

Rockett

2002

Journal of Applied Physics

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Epitaxial Cu(In, Ga)Se 2 ͑CIGS͒ films were grown on ͑110͒-oriented GaAs substrates using a hybrid sputtering and evaporation process. The morphological and structural properties were determined by scanning electron microscopy, atomic force microscopy, x-ray diffraction, and electron backscatter diffraction. Pronounced faceting was observed on the surfaces of the films and Ga diffusion was observed at higher growth temperatures from the substrates into the films. The ͑220͒/͑204͒ surface of CIGS was found to be unstable under the growth conditions. The resulting surface consists entirely of ͕112͖ type facets with no observable ͑220͒/͑204͒-oriented surfaces. The epitaxial temperature for the ͑220͒/͑204͒ layers is considerably lower than that on any other surface tested and is attributed to the reduced diffusion distance required for adatoms to reach growth sites. The surface is proposed to grow by rapid nucleation and gradual growth of Se terminated steps across Se terminated surface terraces. This causes the Se-terminated terraces to be rough and leaves the metal-terminated terraces, on which nucleation is slow, relatively smooth.

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Section: Introductionmentioning

confidence: 99%

“…9 CuAlSe 2 was grown by low-pressure metalorganic chemical vapor deposition on GaAs͑110͒. 10 Most of these studies are about epitaxial relationships. No detailed description of the crystallinity or morphology of the CIGS films grown on ͑110͒ substrates or their optoelectronic properties have been reported.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of Cu(In, Ga)Se2 on GaAs(110)

Liao

Rockett

2002

Journal of Applied Physics

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“…Mean relative errors [(calc – exp)/exp] in cell parameters compared to averaged experimental data depending on the density functional. Experimental data for ZnO, − ZnS, ,− CdS, ,,− CuInS 2 , − CuInSe 2 , − CuGaSe 2 , − CuAlSe 2 , − AgInSe 2 , − CuGaS 2 , − AgAlSe 2 , AgGaSe 2 , − CdIn 2 S 4 , − CZTSe, − diamond, ,− and quartz. − …”

Section: Resultsmentioning

confidence: 99%

“…Black dots mark the average in the experimental literature, and error bars are plotted between the minimum and maximum reported gap values. Experimental data for ZnO, − ZnS, ,− CdS, ,,− CuInS 2 , − CuInSe 2 , − CuGaSe 2 , − CuAlSe 2 , − AgInSe 2 , − CuGaS 2 , − AgAlSe 2 , AgGaSe 2 , − CdIn 2 S 4 , − CZTSe, − diamond, ,− and quartz. − .…”

Section: Resultsmentioning

confidence: 99%

Accurate Ab Initio Calculations on Various PV-Based Materials: Which Functional to Be Used?

Stoliaroff

Latouche

2020

J. Phys. Chem. C

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Herein we report a thorough ab initio investigation targeting the optical and electronic properties of 14 binary, ternary, and quaternary compounds (CuInSe2, CuGaSe2, ZnO, ZnS, CuAlSe2, CuInS2, AgInSe2, CuGaS2, AgAlSe2, AgGaSe2, CdIn2S4, Cu2SnZnSe4 (CZTSe), CdS, and α-SiO2 (quartz)) and 1 elemental solid: C (diamond). To perform the present benchmark, different classes of functionals have been chosen in order to sample modern computational methods (e.g., GGA, global hybrids PBE0 and B3LYP, screened hybrid functional HSE, and many-body methods). Our results demonstrate that the PBE-GGA functional reproduces the structure well but is unable to predict optoelectronic properties. However, B3LYP is the worst performing functional for reproducing the structure but, astonishingly, provides accurate band gaps. PBE0 and HSE usually overestimate and underestimate band gaps, respectively. Single-shot many-body calculations (G0W0) were tested on top of the PBE structure and density for several compounds.

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“…3. This value is smaller than that of 200 arcsec obtained from the grown epilayer by the MOCVD method [13]. Therefore, it should be noted that the grown epilayers by the HWE method are high quality crystalline.…”

Section: Optimum Growth Condition and Structural Propertiesmentioning

confidence: 91%