Cu Thin Films Deposited by DC Magnetron Sputtering for Contact Surfaces on Electronic Components

Abstract

The results of the DC magnetron sputtering of copper thin films with different parameters of deposition are presented. The main aim of studies was to determine the influence of current value, time of deposition and target-substrate distance on morphology and grain size of obtained copper thin films. The effects of film's thickness on the resistivity of copper thin films were investigated. The influence of parameters on the rate of deposition was also determined. The possibility of application of resulting films for contact surface in electronic components was discussed. The morphology was characterized by AFM method, the size of Cu deposited grains was calculated using Scherrer's method. The WDXRF method was used for estimate of thickness of sputtered films. The resistivity of obtained films was measured using four probe method.Keywords: DC magnetron sputtering, Cu films, electronic contact W pracy przedstawiono wyniki badań nad wpływem parametrów napylania magnetronowego cienkich warstw Cu na ich własności. Głównym celem przeprowadzonych badań było określenie wpływu natężenia prądu, czasu osadzania, odległości pomiędzy targetem a napylaną powierzchnią na wielkość ziarna oraz morfologię cienkich warstw. Przeprowadzono również badania nad wpływem grubości warstwy na jej opór właściwy. Omówiona została możliwość stosowania warstw nanoszonych tą metodą w przemyśle elektronicznym. Morfologię otrzymanych warstw charakteryzowano przy użyciu mikroskopu AFM. Wielkość ziarna oszacowana została na podstawie wzoru Scherrera. Grubość warstw wyznaczono techniką WDXRF. Do pomiarów oporu właściwego wykorzystano metodę pomiaru czteropunktowego.

A comparative study of copper thin films deposited using magnetron sputtering and supercritical fluid deposition techniques

“…Similar observations were already noticed in literature on films prepared from SFCD with alcohols or hydrogen as reducing agent [22], sputtered [5,18,23,24], metal vapor vacuum arc, ion implantation and ion beam assistant deposition technologies [25], aerosol deposition [8], pulse electroplating [26], electrodeposited [27] and CVD [28] on various substrates. An increase of the I(111)/I(200) ratio (value equal to 2.17 if intensities are taken from ICDD 01-085-1326 standard data) and values superior to 0.33 are noticed when the substrate temperature increases or after annealing for SCFD films.…”

“…Mech et al [23] investigated the effect of DC magnetron sputtered copper film's thickness on the resistivity of thin films. Conducted studies showed that the bulk resistivity for films thicker than 250 nm were constant (1.87 μΩ·cm) even if grain size increased with sputtering time.…”

“…In the literature, a lot of studies focus on the evolution of copper microstructure as function of the deposition method and its process parameters variations, especially for DC magnetron sputtering. Studies on the resistivity evolution as function of film thickness or process parameters are also found [5,18,23,24,37,38]. However, crystallite size and/or crystallinity and film texture are not always specified.…”

The Voltammetric Analysis of Selenium Electrodeposition from H2SeO3 Solution on Gold Electrode

“…The experiments were carried out in the closed Teflon R cell with three electrodes. The working electrode were slide glass covered of 300 nm thick gold film with the area of 0.38 cm 2 deposited by magnetron sputtering described in our previous paper [29]. A platinum spring was used as a counter electrode and an Ag/AgCl leakless electrode as a reference electrode.…”

Analysis Of The Underpotential Deposition Of Cadmium On Copper

“…The working electrode was freshly evaporated copper on glass by magnetron sputtering technique [20]. Deposition began with a 10 nm adhesion layer of Ti, followed by 300 nm of Cu deposition.…”