Cu penetration into low-k dielectric during deposition and bias-temperature stress

He, Meng-Dong; Novak, Steven W.; Vanamurthy, Lakshmanan; Bakhru, H.; Plawsky, Joel L.; Lu, Toh‐Ming

doi:10.1063/1.3529492

Cited by 23 publications

(13 citation statements)

References 15 publications

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“…We also note that Cu profiles under BTS/TS in either as-deposited or VUV-irradiated SiCOH come with "humps" at shallow depth. These humps have been previously observed by He et al 10 and are believed to be related to Cu diffusion kinetics and solubility in SiCOH. Future work is planned to clarify the impact of VUV irradiation on Cu diffusion kinetics and solubility in SiCOH.…”

Section: -supporting

confidence: 68%

“…Instead of depositing Cu electrodes on the surface of low-k SiCOH thin films, the sample preparation procedure is optimized by employing PECVD deposition of SiCOH on polished Cu thin-film substrates, because Cu was found to diffuse into the dielectric layer during depositing Cu electrodes onto the SiCOH using either e-beam evaporation or sputter deposition. 10 FIG. 1.…”

Section: Effects Of Vacuum-ultraviolet Irradiation On Copper Penetratmentioning

confidence: 99%

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Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress

Guo

King

Zheng

et al. 2015

Applied Physics Letters

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The effects of vacuum-ultraviolet (VUV) irradiation on copper penetration into non-porous low-k dielectrics under bias-temperature stress (BTS) were investigated. By employing x-ray photoelectron spectroscopy depth-profile measurements on both as-deposited and VUV-irradiated SiCOH/ Cu stacks, it was found that under the same BTS conditions, the diffusion depth of Cu into the VUV-irradiated SiCOH is higher than that of as-deposited SiCOH. On the other hand, under the same temperature-annealing stress (TS) without electric bias, the Cu distribution profiles in the VUV-irradiated SiCOH were same with that for the as-deposited SiCOH. The experiments suggest that in as-deposited SiCOH, the diffused Cu exists primarily in the atomic state, while in VUV-irradiated SiCOH, the diffused Cu is oxidized by the hydroxyl ions (OH À) generated from VUV irradiation and exists in the ionic state. The mechanisms for metal diffusion and ion injection in VUV irradiated low-k dielectrics are discussed. V

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Section: -supporting

confidence: 68%

Section: Effects Of Vacuum-ultraviolet Irradiation On Copper Penetratmentioning

confidence: 99%

Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress

Guo

King

Zheng

et al. 2015

Applied Physics Letters

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“…247 Integrated requirements.-Cu/metal diffusion resistance.-An obvious integrated requirement for any dielectric diffusion barrier / metal capping layer is to prevent diffusion of the metal wire into the surrounding ILD. The presence of metal contamination in the ILD has been attributed to a number of reliability issues 248 such as increased leakage currents, [249][250][251] decreased TDDB lifetime [252][253][254][255][256][257][258] and shifts in CMOS device performance. [259][260][261][262][263][264] A number of Cu barrier performance tests have been reported in the literature.…”

Section: -122mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

132

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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“…However, such method 8 usually implies a complete consumption of the metal catalyst, incurring higher cost for producing graphene. Furthermore, chemical etching generates the large quantity of chemical wastes which require vigilant disposal because the metal residues coming either from catalyst or from the etchant, even in very small amount under the form of trace, severely alter the electronic, optical and mechanical properties of the graphene material [45,46]. Hence the exploration on the graphene transfer methods which could preserve the perfectness of the surface of catalyst foil but without deterioration of the crystallinity of graphene is important and it represents the major branch of graphene research area right now.…”

Section: Influence Of the Substrate On The Graphene Propertiesmentioning

confidence: 99%

Transfer of wafer-scale graphene onto arbitrary substrates: steps towards the reuse and recycling of the catalyst

Seah¹,

Vigolo²,

Chai³

et al. 2018

2D Mater.

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Graphene is a two-dimensional material, a single layer of carbon atoms with a honeycomb lattice, which has increasing demand, especially wafer-scale graphene for applications in electronics industry. However, graphene requires to be supported on different substrates depending on its utilization and the transfer stage must be achieved without damaging the graphene structure. Wet chemical etching is the major route for graphene transfer widely applied right now; the loss of catalyst during the separation process being the main limitation. Mechanical peeling is a simple process but the quality of the separated graphene remains poor. Currently, electrochemical delamination or bubbling method and water assisted delamination are new and most promising methods for both efficient graphene transfer and possible catalyst reuse. This article provides a comprehensive review of the various graphene transfer methods without compromise in catalyst deterioration and it concludes with the future challenges in the domain.

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Cu penetration into low-k dielectric during deposition and bias-temperature stress

Cited by 23 publications

References 15 publications

Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress

Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Transfer of wafer-scale graphene onto arbitrary substrates: steps towards the reuse and recycling of the catalyst

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