Crystallization of Sputter-Deposited Amorphous (FeSi2)1–xAlx Thin Films

Tan, Cheng; Dalapati, Goutam Kumar; Tan, Hui Ru; Bosman, Michel; Hui, Hui Kim; Tripathy, S.; Chi, Dongzhi

doi:10.1021/cg501689d

Cited by 8 publications

(5 citation statements)

References 26 publications

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“…1 shows the XRD spectra of Al alloyed FeSi 2 films for different RTA temperatures. A sharp distinct diffraction peak at 17°is observed for sample annealed at Z600°C conforming the formation of (001) planes of α-FeSi(Al) ternary alloy [2,12,15]. A low intensity peak at 52.8°is also observed corresponding to (003) orientations [15].…”

Section: Resultssupporting

confidence: 51%

“…Growth of iron silicides on silicon has attracted a significant attention over the past decade owing to its huge potentials for application in silicon based integrated circuits to photo-electronic devices [1][2][3][4][5][6]. Iron silicide is an interesting material which exhibits at least three different phases namely; simple cubic ɛ-FeSi 2 , tetragonal α-Fesi 2 , and orthorhombic β-FeSi 2 [4].…”

Section: Introductionmentioning

confidence: 99%

“…These different phases of FeSi 2 exhibit metallic, semiconducting and insulating behavior based on their preparation conditions and structure. Of these different phases, β-phase FeSi 2 is the only one which is semiconducting in nature and the most researched silicide material due to its promising optoelectronic properties [2,[7][8][9]. In particular, over the last decade, the semiconducting β-Phase FeSi 2 has been a material for keen interest to photovoltaic (PV) community [5,[9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

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Low temperature grown highly texture aluminum alloyed iron silicide on silicon substrate for opto-electronic applications

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Section: Resultssupporting

confidence: 51%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Low temperature grown highly texture aluminum alloyed iron silicide on silicon substrate for opto-electronic applications

et al. 2015

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“…As the copper oxides provide the suitable band gaps for single junction and tandem solar cells, it is worthwhile to find n-type materials with suitable band gap. Moreover, the sputter deposition technique is industry compatible and suitable for large scale deployment [60,61,62,63,64]. …”

Section: Cu4o3 Thin Film Heterojunction Solar Cellsmentioning

confidence: 99%

Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

et al. 2016

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The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu2O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD) of AlxGa1−xO onto thermal Cu2O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu2O nanopowder. CuO/Cu2O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu4O3/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10−2%.

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“…In previous work [29–32], Kissinger method was widely used to determine the activation energies with the reaction process that occur under linear heating rate conditions. Although this method has some limitations, it is acceptable when an isoconversional method was used to back up the veracity of the Kissinger method [33].…”

Section: Materials and Methodologymentioning

confidence: 99%

Thermogravimetric analysis, kinetic study, and pyrolysis–GC/MS analysis of 1,1ʹ-azobis-1,2,3-triazole and 4,4ʹ-azobis-1,2,4-triazole

Jia

Zhang

et al. 2018

Chemistry Central Journal

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BackgroundIn general, the greater the number of directly linked nitrogen atoms in a molecule, the better its energetic performance, while the stability will be accordingly lower. But 1,1ʹ-azobis-1,2,3-triazole (1) and 4,4ʹ-azobis-1,2,4-triazole (2) show remarkable properties, such as high enthalpies of formation, high melting points, and relatively high stabilities. In order to rationalize this unexpected behavior of the two compounds, it is necessary to study their thermal decompositions and pyrolyses. Although a great deal of research has been focused on the synthesis and characterization of energetic materials with 1 and 2 as the backbone, a complete report on their fundamental thermodynamic parameters and thermal decomposition properties has not been published.MethodsThermogravimetric–differential scanning calorimetry were used to obtain the thermal decomposition data of the title compounds. Kissinger and Ozawa–Doyle methods, the two selected non-isothermal methods, are presented for analysis of the solid-state kinetic data. Pyrolysis–gas chromatography/mass spectrometry was used to study the pyrolysis process of the title compounds.ResultsThe DSC curves show that the thermal decompositions of 1 and 2 are at different heating rates involved a single exothermic process. The TG curves provide insight into the total weight losses from the compounds associated with this process. At different pyrolysis temperatures, the compositions and types of the pyrolysis products differ greatly and the pyrolysis reaction at 500 °C is more thorough than 400 °C.ConclusionsApparent activation energies (E) and pre-exponential factors (lnA/s−1) are 291.4 kJ mol−1 and 75.53 for 1; 396.2 kJ mol−1 and 80.98 for 2 (Kissinger). The values of E are 284.5 kJ mol−1 for 1 and 386.1 kJ mol−1 for 2 (Ozawa–Doyle). The critical temperature of thermal explosion (Tb) is evaluated as 187.01 °C for 1 and 282.78 °C for 2. The title compounds were broken into small fragment ions under the pyrolysis conditions, which then might undergo a multitude of collisions and numerous other reactions, resulting in the formation of C2N2 (m/z 52), etc., before being analyzed by the GC/MS system.Electronic supplementary materialThe online version of this article (10.1186/s13065-018-0381-x) contains supplementary material, which is available to authorized users.

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Crystallization of Sputter-Deposited Amorphous (FeSi₂)_1–xAl_x Thin Films

Cited by 8 publications

References 26 publications

Low temperature grown highly texture aluminum alloyed iron silicide on silicon substrate for opto-electronic applications

Low temperature grown highly texture aluminum alloyed iron silicide on silicon substrate for opto-electronic applications

Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

Thermogravimetric analysis, kinetic study, and pyrolysis–GC/MS analysis of 1,1ʹ-azobis-1,2,3-triazole and 4,4ʹ-azobis-1,2,4-triazole

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