Low temperature grown highly texture aluminum alloyed iron silicide on silicon substrate for opto-electronic applications

Dalapati, Goutam Kumar; Tan, Cheng; Masudy‐Panah, Saeid; Tan, Hui Ru; Chi, Dongzhi

doi:10.1016/j.matlet.2015.07.066

Cited by 15 publications

(12 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…reducing the in-plane dimension of the contact [46,47], removing the crystalline template from the substrate through pre-amorphisation implant [48,49,50] or by alternating the available thermal budget during deposition [51,52] and annealing [53,54]. The current study therefore indicates that modern experimental techniques can further understand binary and ternary solid-phase reactions.…”

Section: Influence Of Alloying On Phase Formationmentioning

confidence: 86%

The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

Geenen

Solano

Jordan-Sweet

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

The controlled formation of silicide materials is an ongoing challenge to facilitate the electrical contact of Si-based transistors. Due to the ongoing miniaturisation of the transistor, the silicide is trending to ever-thinner thickness's. The corresponding increase in surface-to-volume ratio emphasises the importance of low-energetic interfaces. Intriguingly, the thickness reduction of nickel silicides results in an abrupt change in phase sequence. This paper investigates the sequence of the silicides phases, and their preferential orientation with respect to the Si(001) substrate, for both 'thin' (i.e. 9 nm) and 'ultra-thin' (i.e. 3 nm) Ni films. Furthermore, as the addition of ternary elements is often considered in order to tailor the silicides' properties, additives of Al, Co and Pt are also included in this study. Our results show that the first silicide formed is epitaxial θ-Ni 2 Si , regardless of initial thickness or alloyed composition. The transformations towards subsequent silicides are changed through the additive elements, which can be understood through solubility arguments and classical nucleation theory. The crystalline alignment of the formed silicides with the substrate significantly differs through alloying. The observed textures of sequential silicides

show abstract

Section: Influence Of Alloying On Phase Formationmentioning

confidence: 86%

The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

Geenen

Solano

Jordan-Sweet

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The sputtering process also allows precise tuning of the lm's microstructure and its thickness by adjusting of the sputtering conditions. [36][37][38][39][40][41] The performance of the PEC water splitting can be limited by the light absorption capabilities of the photoelectrodes and recombination of the photogenerated electrons and holes. These parameters are strongly affected by the thickness, grain size and crystallinity of the deposited lm.…”

Section: Introductionmentioning

confidence: 99%

Rapid thermal annealing assisted stability and efficiency enhancement in a sputter deposited CuO photocathode

et al. 2016

Self Cite

View full text Add to dashboard Cite

show abstract

“…Fortunately, Al-alloyed iron silicide reduces the transition temperature significantly 26 34 . By controlling the Al composition and thickness of iron-silicide, it is possible to grow high quality α -phase FeSi(Al) alloy at 600 °C 35 . Furthermore, the thermal treatment of Al alloyed amorphous iron-silicide leads to the formation of uniformly regrown crystalline silicon layer at the silicide/silicon junction, which improved interface quality 35 .…”

mentioning

confidence: 99%

“…By controlling the Al composition and thickness of iron-silicide, it is possible to grow high quality α -phase FeSi(Al) alloy at 600 °C 35 . Furthermore, the thermal treatment of Al alloyed amorphous iron-silicide leads to the formation of uniformly regrown crystalline silicon layer at the silicide/silicon junction, which improved interface quality 35 . Even though, use of α -phase FeSi(Al) ternary alloy has huge potential for photovoltaic application, there has been no effort towards the integration of α -phase FeSi(Al) with silicon for photovoltaic devices.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

Dalapati

Masudy‐Panah

Kumar

et al. 2015

Sci Rep

Self Cite

View full text Add to dashboard Cite

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+−n homojunction through the formation of re-grown crystalline silicon layer (~5–10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

show abstract

Low temperature grown highly texture aluminum alloyed iron silicide on silicon substrate for opto-electronic applications

Cited by 15 publications

References 15 publications

The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

Rapid thermal annealing assisted stability and efficiency enhancement in a sputter deposited CuO photocathode

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

Contact Info

Product

Resources

About