Crystallization of LPCVD Silicon Films by Low Temperature Annealing

Aoyama, Takashi; Kawachi, Genshiro; Konishi, N.; Suzuki, Takaya; Okajima, Yoshiaki; Miyata, Kenji

doi:10.1149/1.2096829

Cited by 101 publications

(27 citation statements)

References 14 publications

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“…There are several ways to fabricate poly-Si TFTs, such as chemical vapor deposition [3], solid phase crystallization [4,5,6], and excimer laser annealing [7,8]. However, there are still some problems to be solved, such as high manufacturing cost and uniformity.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Effect of dopant on metal induced lateral crystallization rate

et al. 2015

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Section: Accepted Manuscriptmentioning

confidence: 99%

Effect of dopant on metal induced lateral crystallization rate

et al. 2015

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“…In order to integrate peripheral driving circuits on a glass substrate, a low-temperature process (∼ 600 • C) that does not compromise the device performance should be developed. The constraint of a low process temperature results in low throughput and low activation efficiency due to long-term post-ion-implantation annealing (at ∼ 600 • C for 12-24 h) [3], [4].…”

Section: Introductionmentioning

confidence: 99%

High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain

Choi

Han

Kim

et al. 2010

IEEE Electron Device Lett.

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A high-performance polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Schottky-barrier (SB) source/drain (S/D) junctions is proposed. A p-channel operation on the intrinsic nickel (Ni) silicided S/D was successfully realized with the aid of a thin active layer, despite the fact that the Ni silicided material shows a high SB height (SBH) for holes. Furthermore, for n-channel operation, the dopant-segregation technique implemented on the intrinsic Ni silicide was utilized to reduce the effective SBH for electrons. The results show a higher on-current due to the lower parasitic resistance as well as superior immunity against short-channel effects, compared to the conventional poly-Si TFT composed of p-n S/D junctions. Index Terms-Dopant-segregated Schottky barrier (DSSB), dopant segregation (DS), high performance, MOSFET, Ni silicide, Schottky barrier (SB), thin body, thin-film transistors (TFTs).

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“…Several crystallization techniques, such as solid phase crystallization ͑SPC͒ 1,2 and laser annealing of a-Si, 3,4 have been employed to obtain high-quality poly-Si. Laser annealing is currently thought to be the most preferable method for the fabrication of low-temperature poly-Si TFTs.…”

mentioning

confidence: 99%

Two-Step Annealing for Nickel-Induced Crystallization of Amorphous Silicon Films

Hwang¹,

Chang²,

Chen³

2005

J. Electrochem. Soc.

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Nickel ͑Ni͒-induced crystallization of amorphous silicon has been studied with a novel two-step annealing process for reducing the long annealing time and improving the structural and electrical properties of polycrystalline silicon ͑poly-Si͒ films. Two-step annealing is a combination of rapid thermal annealing ͑RTA͒ and conventional furnace annealing ͑CFA͒. In the two-step annealing, RTA was employed at 550°C for 10 min and CFA was used at 500°C for various annealing times ͑5,10,15, and 20 h͒ in N 2 ambient. The poly-Si films prepared using two-step annealing have a more uniform, larger grain size and MILC rate compared to those prepared by CFA alone. Additionally, poly-Si films prepared by RTA plus 5 h of CFA exhibit a lower resistivity of 0.42 ϫ 10 5 ⍀-cm than those processed with 25 h of CFA.Polycrystalline silicon ͑poly-Si͒ is an attractive material for use in large-area electronics, such as thin film transistors ͑TFTs͒, solar cells, and image sensors, because of its high carrier mobility compared with amorphous silicon ͑a-Si͒. Several crystallization techniques, such as solid phase crystallization ͑SPC͒ 1,2 and laser annealing of a-Si, 3,4 have been employed to obtain high-quality poly-Si. Laser annealing is currently thought to be the most preferable method for the fabrication of low-temperature poly-Si TFTs. However, it still has many unsolved problems such as uniformity and manufacturing cost. Although SPC is a relatively inexpensive process, the processing temperature of around 600°C still exceeds the upper temperature limit of conventional glass substrates.Recently, the metal-induced crystallization ͑MIC͒ of a-Si has been intensively investigated. It is well known that the crystallization temperature of a-Si can be lowered by the addition of certain metals such as Al, 5 Au, 6 and Ni. 7 Furthermore, selective deposition of Ni 8,9 on a-Si films induced crystallization of a-Si outside of the metal coverage. This approach has been called metal-induced lateral crystallization ͑MILC͒ and can avoid the direct introduction of Ni into the Si films outside of the Ni coverage region.However, both the MIC and MILC techniques require too much annealing time to enhance the grain size and MILC rate. The annealing time of MIC and MILC consists of an incubation time and a characteristic crystallization time. The incubation time is the time required to reach a steady-state nucleation rate from the initial state. The incubation time is several hours in conventional furnace annealing ͑CFA͒, depending on the annealing temperature and the initial state of the metal/a-Si structure. To reduce the long annealing time of crystallization for a-Si, it is necessary to reduce the incubation time for nucleation.In this work, we propose a novel annealing method, a combination of rapid thermal annealing ͑RTA͒ and CFA. This method, which we term two-step annealing, could obtain high-quality poly-Si films and reduce the annealing time for crystallization of a-Si. Many studies had evidenced the efficiency of RTA. 10,11 A higher MILC rate...

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Crystallization of LPCVD Silicon Films by Low Temperature Annealing

Cited by 101 publications

References 14 publications

Effect of dopant on metal induced lateral crystallization rate

Effect of dopant on metal induced lateral crystallization rate

High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain

Two-Step Annealing for Nickel-Induced Crystallization of Amorphous Silicon Films

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