Amorphous SiO 2 and amorphous Si films were deposited on glass using radio frequency (RF) sputtering, and were subsequently poly-crystallized using blue-laser diode annealing (BLDA) scanned by a CW beam. Ne, which has a smaller atomic radius than Ar, was used for the sputtering of the Si film. For the gate insulator, a small amount of O 2 gas diluted with Ar was flown during the sputtering to optimize the SiO 2 film with a low leakage current. A simple TFT structure with a metal source and drain (S/D) was adopted to realize a low-temperature process with a low fabrication cost. Furthermore, to confirm the effectiveness of the sputtered gate oxide, a poly-Si TFT adopting a Si film deposited using plasma-enhanced chemical vapor deposition (PE CVD) for the channel was fabricated and was compared with the TFT with a sputtered Si film for the channel. Reasonable V g -I d characteristics were obtained for both poly-Si TFTs. The TFT structure with a metal S/D formed through a low-temperature sputtering-based process is expected to be applied to Si TFTs on an arbitrary flexible panel.
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