(Invited) Advanced Crystallization Using Blue Laser-Diode Annealing for Low Temperature Poly Si TFTs

Abstract

Laser Crystallizations using Blue Laser-Diodes Annealing (BLDA) is described for mounting the Si TFTs and the thin film functional sensors on panels. To realize high performance poly Si TFTs not only on glass but also on flexible sheets, effective laser annealing for high quality Si film by low temperature deposition is expected. To conduct a low temperature TFT process below 400°C, metal source/drain structure without using ion implantation is proposed as a low-cost fabrication. By inserting thermal buffer layers on flexible sheet, stable and effective crystallization of Si film using BLDA can be performed. High-performance CMOS TFT system with functional sensors is expected on arbitrary flexible sheets.