Blue-laser-diode annealing (BLDA) in the continuous wave mode was performed for sputtered silicon (Si) films. Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate. For the source and drain formation, titanium (Ti) was evaporated to make the metal directly contact the channel Si film without adopting n + doping. The improvement of the drain current was confirmed after hydrogen annealing at 400°C, and the typical poly-Si TFT characteristic with 50 cm 2 /Vs deduced effective carrier mobility was successfully observed. As the low-cost TFT fabrication without ion implantation becomes feasible, the low-temperature fabrication of poly-Si TFTs using BLDA is expected. ARTICLE HISTORY

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The photoconductivity of Si films after blue multi-laser diode annealing (BLDA) has been investigated for photosensor applications. It was found that, as the laser power increases from 4 to 6 W, the crystal structure changed from micrograins to large grains, and that the photoconductivity increases. After sintering the Si films in H2/N2 (4%) ambient at 450 °C, a photosensitivity ratio of 94 was obtained under white light exposure of 100 mW/cm2 for the Si film after the BLDA at 6 W owing to the reduction in the defects density in the Si films. These results suggest that BLDA is promising for photosensor applications in a multifunctional system on panels.