Crystal structure and strain state of molecular beam epitaxial grown Gd<sub>2</sub>O<sub>3</sub>on Si(1 1 1) substrates: a diffraction study

Wang, J X; Laha, Apurba; Fissel, A.; Schwendt, Dominik; Dargis, Rytis; Watahiki, Tatsuro; Shayduk, Roman; Braun, Wolfgang; Liu, T M; Osten, H. J.

doi:10.1088/0268-1242/24/4/045021

Cited by 32 publications

(23 citation statements)

References 29 publications

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“…Gd 2 O 3 is a promising candidate among the lanthanide oxides due to its close lattice match to silicon (

10812

2 a si = 10.862 Å). Epitaxial growth of Gd 2 O 3 has been demonstrated for a variety of substrates, including GaN [ 1 ], Si [ 6 ], and SiC [ 7 ] by atomic layer deposition [ 8 ] and molecular beam epitaxy (MBE) [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in situ X-ray diffraction

et al. 2012

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We studied the early stages of Gd2O3 epitaxy on Si(111) in real time by synchrotron-based, high-resolution X-ray diffraction and by reflection high-energy electron diffraction. A comparison between model calculations and the measured X-ray scattering, and the change of reflection high-energy electron diffraction patterns both indicate that the growth begins without forming a three-dimensional crystalline film. The cubic bixbyite structure of Gd2O3 appears only after a few monolayers of deposition.

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“…Gd 2 O 3 is a promising candidate among the lanthanide oxides due to its close lattice match to silicon (

10812

Section: Introductionmentioning

confidence: 99%

Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in situ X-ray diffraction

et al. 2012

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“…5,6 Extensive studies have been conducted and high quality epitaxial growth of Gd 2 O 3 (111) on Si(111) has been reported together with the method of growing a double-barrier quantum structure by Osten's and Fissel's group. 7,8 They also reported an epitaxial growth of (110)-oriented Gd 2 O 3 on Si(100). A sub-nanometer capacitance equivalent oxide thickness has been obtained with this structure.…”

mentioning

confidence: 97%

Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)

Sitaputra

Tsu

2012

Applied Physics Letters

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“…28 In order to achieve thicknesses of the oxide buffer necessary for SOI structures, cubic bixbyite rare-earth oxide (gadolinium oxide or erbium oxide) layers grown on silicon can be used. On the other hand, the thickness of the layer must be at least several monolayers in order to achieve its relaxation to get its lattice parameter close to that of germanium.…”

Section: Resultsmentioning

confidence: 99%

Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)

Dargis¹,

Arkun²,

Clark³

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Ternary and binary rare-earth oxides that are used as a template buffer, which accommodates the crystal lattice mismatch between substrate and a semiconductor layer, are discussed here. The oxides were grown on Si(111) substrates and exhibit the cubic bixbyite crystal structure. Stabilization of the cubic bixbyite structure of ternary erbium-neodymium oxide and lanthanum oxide was analyzed using structural investigation of the epitaxially grown oxides and ab initio density functional theory calculations. The authors demonstrate that despite the more energetically favorable hexagonal structure of bulk lanthanum oxide a pseudomorphic single crystal cubic lanthanum oxide layer grows under nonequilibrium conditions of a molecular beam epitaxy process on gadolinium oxide. Growth of hexagonal lanthanum oxide begins when the critical thickness of the layer is reached. Germanium was epitaxially grown on the cubic bixbyite lanthanum sesquioxide. Due to a higher surface energy, germanium starts to grow in the form of twinned islands on the oxide layer that later merge, forming a closed layer. X ray diffraction reveals mostly single crystal structure of the germanium layer with stacking twins located only at the interface with the lanthanum oxide layer.

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Crystal structure and strain state of molecular beam epitaxial grown Gd₂O₃on Si(1 1 1) substrates: a diffraction study

Cited by 32 publications

References 29 publications

Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in situ X-ray diffraction

Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in situ X-ray diffraction

Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)

Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)

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Crystal structure and strain state of molecular beam epitaxial grown Gd2O3on Si(1 1 1) substrates: a diffraction study

Cited by 32 publications

References 29 publications

Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in situ X-ray diffraction

Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in situ X-ray diffraction

Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)

Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)

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Crystal structure and strain state of molecular beam epitaxial grown Gd₂O₃on Si(1 1 1) substrates: a diffraction study