Crystal orientation effects of sapphire substrate on graphene direct growth by metal catalyst-free low-pressure CVD

Ueda, Yuki; Yamada, Jumpei; Ono, Tomoshige; Maruyama, Toru; Naritsuka, Shigeya

doi:10.1063/1.5098806

Cited by 14 publications

(27 citation statements)

References 42 publications

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“…Recently, we reported that graphene direct CVD on r-plane (1–102) sapphire grew very fast and offered a quite uniform layer compared to that of conventional growth on c-plane sapphire. , However, there are many unknown parts in the mechanism of graphene direct growth on sapphire. On the other hand, a-plane (11–20) sapphire is sometimes used as a substrate for epitaxial growth of nitrides or oxides, as well as c-plane and r-plane sapphires. − In addition, a-plane sapphire has attracted attention as a low-cost substrate for nitride semiconductor-based devices because an 8 in.…”

Section: Introductionmentioning

confidence: 99%

Effect of Growth Pressure on Graphene Direct Growth on an A-Plane Sapphire Substrate: Implications for Graphene-Based Electronic Devices

Ueda

Maruyama

Naritsuka

2020

ACS Appl. Nano Mater.

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Graphene direct growth was performed on an a-plane (1–120) sapphire substrate using low-pressure chemical vapor deposition (LPCVD) without a metal catalyst. The direct graphene growth on a-plane sapphire is very attractive not only for the preparation of a template substrate of remote epitaxy but also for the fabrication of low-cost graphene-based electronic devices. The growth pressure dependence was systematically studied to reveal the growth mechanism of graphene. It was found that the graphene island density decreased with growth pressure, while the growth rate increased. In addition, single-layer graphene with high uniformity was successfully obtained because the graphene growth was driven by the catalytic effect of the a-plane sapphire surface. Finally, high-quality and highly uniform single-layer graphene with a Raman D/G ratio of 0.2 was demonstrated on the whole surface of a 2 in. a-plane sapphire substrate at a growth pressure of 5 kPa.

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Section: Introductionmentioning

confidence: 99%

Effect of Growth Pressure on Graphene Direct Growth on an A-Plane Sapphire Substrate: Implications for Graphene-Based Electronic Devices

Ueda

Maruyama

Naritsuka

2020

ACS Appl. Nano Mater.

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“…Typically, c‐plane, r‐plane and a‐plane sapphire have been employed. It is generally believed that r‐plane enables better quality and faster growth rate for graphene growth, which could be attributed to the advanced catalytic capability of r‐plane, as claimed by previous reports [11c,d] . Nevertheless, it is worth noting that the statement on “catalytic capability” indeed lack of theoretical proof and experimental verification in a systematic way.…”

Section: Direct Growth Of Graphene Over Sapphirementioning

confidence: 88%

“…Ueda et al . also carried out an investigation by probing the growth on r‐plane, c‐plane and a‐plane sapphire surfaces under low pressure using different temperatures [11d] . Similarly, it was found that the r‐plane featured favorable catalytic activity with respect to c‐plane and a‐plane.…”

Section: Direct Growth Of Graphene Over Sapphirementioning

confidence: 95%

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Chemical Vapor Deposition Synthesis of Graphene over Sapphire Substrates

2021

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Graphene grown with less grain boundaries, larger grain sizes and transfer‐free feature by chemical vapor deposition (CVD) is of significant importance to fulfill practical applications. Sapphire has readily emerged as an ideal substrate for graphene growth owing to its relatively low cost, good mechanical strength and physical/chemical stability under CVD conditions. In this minireview, recent advance in the CVD preparation of graphene over sapphire substrates is summarized. The graphene growth on epitaxial metal (111) film derived from c‐plane sapphire and direct fabrication over sapphire are respectively discussed. Application sectors of graphene/sapphire hybrid materials are further reviewed. Finally, perspectives on the synthesis of graphene over sapphire are given.

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“…Al 2 O 3 substrate has been used for the direct growth of graphene due to its insulating properties, lower adhesion energy to graphene, and high reusability. [ 176–180 ] Hwang and co‐workers reported the CVD growth of epitaxial graphite films on single‐crystal Al 2 O 3 (0001) substrate using propane as the carbon source at a growth temperature up to 1650 °C. [ 181 ] However, the film was not uniform with the thinnest region of nine layers.…”

Section: Growth On Single‐crystal Semiconducting and Dielectric Substratesmentioning

confidence: 99%

Substrate Engineering for CVD Growth of Single Crystal Graphene

et al. 2021

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Single crystal graphene (SCG) has attracted enormous attention for its unique potential for next‐generation high‐performance optoelectronics. In the absence of grain boundaries, the exceptional intrinsic properties of graphene are preserved by SCG. Currently, chemical vapor deposition (CVD) has been recognized as an effective method for the large‐scale synthesis of graphene films. However, polycrystalline films are usually obtained and the present grain boundaries compromise the carrier mobility, thermal conductivity, optical properties, and mechanical properties. The scalable and controllable synthesis of SCG is challenging. Recently, much attention has been attracted by the engineering of large‐size single‐crystal substrates for the epitaxial CVD growth of large‐area and high‐quality SCG films. In this article, a comprehensive and comparative review is provided on the selection and preparation of various single‐crystal substrates for CVD growth of SCG under different conditions. The growth mechanisms, current challenges, and future development and perspectives are discussed.

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Crystal orientation effects of sapphire substrate on graphene direct growth by metal catalyst-free low-pressure CVD

Cited by 14 publications

References 42 publications

Effect of Growth Pressure on Graphene Direct Growth on an A-Plane Sapphire Substrate: Implications for Graphene-Based Electronic Devices

Effect of Growth Pressure on Graphene Direct Growth on an A-Plane Sapphire Substrate: Implications for Graphene-Based Electronic Devices

Chemical Vapor Deposition Synthesis of Graphene over Sapphire Substrates

Substrate Engineering for CVD Growth of Single Crystal Graphene

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