2021
DOI: 10.1002/smtd.202001213
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Substrate Engineering for CVD Growth of Single Crystal Graphene

Abstract: Single crystal graphene (SCG) has attracted enormous attention for its unique potential for next‐generation high‐performance optoelectronics. In the absence of grain boundaries, the exceptional intrinsic properties of graphene are preserved by SCG. Currently, chemical vapor deposition (CVD) has been recognized as an effective method for the large‐scale synthesis of graphene films. However, polycrystalline films are usually obtained and the present grain boundaries compromise the carrier mobility, thermal condu… Show more

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Cited by 28 publications
(24 citation statements)
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“…More specifically, top‐down methods mainly include micromechanical exfoliation and liquid phase exfoliation methods, [ 15,33–42 ] while bottom‐up methods generally include chemical vapor deposition (CVD) and hydrothermal/solvothermal methods. [ 43–53 ]…”
Section: Synthesis and Optoelectronic Properties Of 2d Materials And ...mentioning
confidence: 99%
“…More specifically, top‐down methods mainly include micromechanical exfoliation and liquid phase exfoliation methods, [ 15,33–42 ] while bottom‐up methods generally include chemical vapor deposition (CVD) and hydrothermal/solvothermal methods. [ 43–53 ]…”
Section: Synthesis and Optoelectronic Properties Of 2d Materials And ...mentioning
confidence: 99%
“…Mass production schemes discussed in this section includes graphene transfer process using roll-to-roll (R2R) processing, graphene growth and MEMS device fabrication on transition metal thin films for transfer-free process, controlled graphene growth on single-crystalline films, strain engineering on the substrate, and other approaches. [183][184][185]. Two data points with asterisks represent CVD growth of graphene by accelerated growth technique [186,187].…”
Section: Proposed Solutionsmentioning
confidence: 99%
“…Also, grain boundaries of transition metal film act as a nucleation site which may lead to the growth of additional patches of graphene. As a result, it is important to minimize transition metal's grain boundaries to successfully control the uniformity of graphene [183].…”
Section: Low Temperature Growth Of Graphenementioning
confidence: 99%
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