2016
DOI: 10.1016/j.materresbull.2016.03.017
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Crystal, optical, and electrical characteristics of transparent conducting gallium-doped zinc oxide films deposited on flexible polyethylene naphthalate substrates using radio frequency magnetron sputtering

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Cited by 28 publications
(11 citation statements)
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“…The resistivity of the exible ITO/Ag/ITO triple-layer structures decreased from 9.12 Â 10 À4 to 2.2 Â 10 À5 U cm as the Ag deposition time increased from 10 to 120 s. The decrease in resistivity is mainly due to the increases in both carrier concentration and mobility with the increase in Ag deposition time because the resistivity of the exible ITO/Ag/ITO triple-layer structures is proportional to the reciprocal value of the product of the carrier concentration and the mobility. 38 The carrier concentration increased from 2.65 Â 10 20 cm À3 to 2.21 Â 10 22 cm À3 as the Ag deposition time increased from 10 to 120 s. As discussed by Alford Klöppel et al, the metal interlayer can act as an electron source for the oxide layer in the TCO/ metal/TCO structure. 39 Therefore, the electron in the Ag layer can be easily injected into the ITO layer due to downward band bending at the contact by the difference in work functions between Ag (4 M ¼ 4.4 eV) layer and ITO (4 O ¼ 4.5-5.1 eV) in the exible ITO/Ag/ITO triple-layer structures.…”
Section: Resultsmentioning
confidence: 91%
“…The resistivity of the exible ITO/Ag/ITO triple-layer structures decreased from 9.12 Â 10 À4 to 2.2 Â 10 À5 U cm as the Ag deposition time increased from 10 to 120 s. The decrease in resistivity is mainly due to the increases in both carrier concentration and mobility with the increase in Ag deposition time because the resistivity of the exible ITO/Ag/ITO triple-layer structures is proportional to the reciprocal value of the product of the carrier concentration and the mobility. 38 The carrier concentration increased from 2.65 Â 10 20 cm À3 to 2.21 Â 10 22 cm À3 as the Ag deposition time increased from 10 to 120 s. As discussed by Alford Klöppel et al, the metal interlayer can act as an electron source for the oxide layer in the TCO/ metal/TCO structure. 39 Therefore, the electron in the Ag layer can be easily injected into the ITO layer due to downward band bending at the contact by the difference in work functions between Ag (4 M ¼ 4.4 eV) layer and ITO (4 O ¼ 4.5-5.1 eV) in the exible ITO/Ag/ITO triple-layer structures.…”
Section: Resultsmentioning
confidence: 91%
“…Typically, a higher Φ TC indicates an increased performance for transparent conducting films. The Φ TC for the IMO/AZO/mica structure with various thicknesses, IMO films 17,20,21,[23][24][25][26][27][28][29][30][31][32][33][34] and numerous TCO films on flexible substrates 14,[35][36][37][38][39][40][41][42][43][44] are shown in Fig. 3b.…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, it has good stability and long durability and is inexpensive and highly abundant (Katwal, Paulose, Rusakova, Martinez, & Varghese, ). These characteristics enable ZnO to have several applications in diverse fields, such as in solar cells, gas sensors, piezoelectric transducers, light‐emitting diodes, and transparent conductors (Banerjee et al, ; Carcia, McLean, Reilly, & Nunes, ; Chin, Chao, & Wu, ; Kanmani & Rhim, ; Kim, Lee, & Noh, ; Sirelkhatim et al, ; Umetsu et al, ; Valerini et al, ; Yang et al, ; Yousef & Danial, ). Due to their antimicrobial and UV protection properties, ZnO and nanoparticle ZnO have been use as antimicrobial agents in food packaging or in biomedical applications, in antiseptic ointments, and for protection against sunburns, for example.…”
Section: Discussionmentioning
confidence: 99%
“…Several studies using different ZnO deposition methods on polymers have been reported, such as pulsed laser deposition, spray pyrolysis, DC, or radio frequency magnetron sputtering, sol–gel processes or chemical vapor deposition, but these were often inefficient, usually requiring long‐time periods or large amount of power, resulting in thick films with poor surface uniformity. Also, to obtain regularly structured ZnO at RT conditions is a challenge (Andrade & Miki‐Yoshida, ; Chin et al, ; Guo, Ji, Xu, Simon, & Wu, ; Kim et al, ). In the present work, and in opposition with previous works in the field, ZnO thin films were synthesized on PET substrates by DC magnetron sputtering, using low power and in a short period of time, and at RT, being, in this way, compatible with the polymeric subtract, resulting in good quality thin films.…”
Section: Discussionmentioning
confidence: 99%